NXP Semiconductors_MMRF5014HR5
original

NXP Semiconductors
MMRF5014HR5

285-MMRF5014HR5
PDF Datasheet
RF MOSFET HEMT 50V NI360
26 Weeks

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Tech Specifications

Typical Output Capacitance @ Vds (pF)
7.7@50V
Configuration
N-Channel
Typical Power Gain (dB)
18
PPAP
No
Voltage - Rated
125 V
Channel Mode
Enhancement
Product Status
Active
Automotive
No
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MMRF5014HR5 Description

MMRF5014HR5 Description

The MMRF5014HR5 from NXP Semiconductors is a high-performance RF MOSFET HEMT designed for demanding RF power amplification applications. Operating within a frequency range of 1MHz to 2.7GHz, this device delivers 18dB gain at 2.5GHz, making it ideal for high-frequency signal amplification. With a rated voltage of 125V and a test voltage of 50V, it ensures robust performance under high-power conditions. The chassis-mount package enhances thermal management, supporting a power output of 125W. Its low test current (350mA) and operating current (5mA) contribute to efficient power handling, while the NI360 technology ensures superior linearity and reliability.

MMRF5014HR5 Features

  • High Gain & Broadband Performance: 18dB gain at 2.5GHz, suitable for wideband RF applications.
  • High Power Handling: 125W output power with 125V rated voltage for robust operation.
  • Efficient Thermal Design: Chassis-mount package for improved heat dissipation.
  • Low Current Consumption: Test current of 350mA and operating current of 5mA enhance efficiency.
  • NI360 Technology: Delivers exceptional linearity and reliability in high-frequency environments.
  • Wide Frequency Range: Covers 1MHz to 2.7GHz, ideal for diverse RF systems.

MMRF5014HR5 Applications

The MMRF5014HR5 excels in high-power RF amplification, including:

  • Base Station Amplifiers: Provides stable gain and power for cellular infrastructure.
  • Military & Aerospace Systems: Reliable performance in harsh environments.
  • Broadcast Transmitters: High linearity for clear signal transmission.
  • Industrial RF Equipment: Suitable for high-power industrial applications.
  • Test & Measurement Systems: Precision amplification for lab and field testing.

Conclusion of MMRF5014HR5

The MMRF5014HR5 stands out as a high-efficiency RF MOSFET HEMT with superior gain, power handling, and thermal performance. Its NI360 technology and broad frequency range make it a versatile choice for advanced RF systems. Whether for telecommunications, defense, or industrial use, this device offers unmatched reliability and performance, cementing NXP's reputation in high-power RF solutions.

FAQ

What is MMRF5014HR5?
MMRF5014HR5 is a RF FETs, MOSFETs from NXP Semiconductors. This product page provides its main specifications, pricing information, availability, and inquiry options.
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