NXP Semiconductors_MRF300BN
original

NXP Semiconductors
MRF300BN

285-MRF300BN
PDF Datasheet
RF MOSFET LDMOS 50V TO247
35 Weeks

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Tech Specifications

Typical Output Capacitance @ Vds (pF)
104@50V
Configuration
Single
Typical Power Gain (dB)
28.2
PPAP
No
Channel Mode
Enhancement
Product Status
Active
Automotive
No
Supplier Package
TO-247
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MRF300BN Description

MRF300BN Description

The MRF300BN from NXP Semiconductors is a high-performance RF MOSFET utilizing LDMOS (Laterally Diffused Metal Oxide Semiconductor) technology, designed for demanding RF power amplification applications. Operating within a frequency range of 27MHz to 250MHz, this device delivers a robust 300W output power at 50V test voltage, making it ideal for high-power RF systems. Packaged in a TO-247 form factor and supplied in a tube, the MRF300BN combines high efficiency with reliability, meeting ROHS3 and REACH compliance standards. Its 18.7dB gain ensures superior signal amplification, while its through-hole mounting simplifies integration into robust PCB designs.

MRF300BN Features

  • High Power Output: 300W capability for demanding RF amplification.
  • Broad Frequency Range: Covers 27MHz to 250MHz, suitable for diverse RF applications.
  • LDMOS Technology: Ensures high efficiency, thermal stability, and linearity.
  • High Gain (18.7dB): Enhances signal strength with minimal noise.
  • 50V Operating Voltage: Optimized for high-power RF designs.
  • TO-247 Package: Robust thermal and mechanical performance.
  • Compliance: ROHS3 and REACH unaffected, ensuring environmental and regulatory adherence.
  • Not MSL Sensitive: Eliminates moisture handling concerns during assembly.

MRF300BN Applications

The MRF300BN excels in high-power RF amplification scenarios, including:

  • Industrial RF Generators: For heating, welding, and plasma applications.
  • Broadcast Transmitters: AM/FM radio and TV signal amplification.
  • Aerospace & Defense: Radar systems and communication infrastructure.
  • Amateur Radio (HAM): High-power RF amplifiers for long-range communication.
  • Medical Equipment: RF energy delivery systems.

Conclusion of MRF300BN

The MRF300BN stands out as a high-reliability LDMOS RF MOSFET, offering exceptional power output, broad frequency coverage, and superior gain for critical RF applications. Its TO-247 packaging and compliance with environmental standards make it a preferred choice for engineers designing robust, high-performance RF systems. Whether for industrial, broadcast, or defense applications, the MRF300BN delivers consistent performance and durability, solidifying NXP’s reputation in advanced RF solutions.

FAQ

What package or case is MRF300BN available in?
MRF300BN is available in the TO-247-3 package / case.
Are there related or alternative parts for MRF300BN?
What operating temperature range does MRF300BN support?
What is the standard lead time for MRF300BN?
What voltage specification is listed for MRF300BN?
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