NXP Semiconductors_PDTB123TT
original

NXP Semiconductors
PDTB123TT

293-PDTB123TT
PDF Datasheet
TRANS PREBIAS PNP 250MW TO236AB

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Tech Specifications

Status
Active
Mounting
SMD (SMT)
Max Vce (sat)
300mV @ 2.5mA, 50mA
Typical Gain (hFE) (Min)
100 @ 50mA, 5V
VCEO Maximum Collector-Emitter Breakdown Voltage
50V
Resistor - Base (R1) (Ohms)
2.2k
Maximum Power Dissipation
250mW
Transistor Polarity
PNP - Pre-Biased
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PDTB123TT Description

Reel - TR provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Bipolar Transistor Arrays, Pre-Biased that the PDTB123TT belongs to can be classified under the Discrete Semiconductors. PDTB123TT is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. PDTB123TT provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. NXP Semiconductors plays a crucial role in ensuring the smooth flow of goods and meeting market demand. NXP Semiconductors is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, NXP Semiconductors builds trust with consumers and enhances the overall reputation of their products.

FAQ

What is the mounting type of PDTB123TT?
PDTB123TT uses a SMD (SMT) mounting style based on the listed product specifications.
What package or case is PDTB123TT available in?
What is PDTB123TT?
Is PDTB123TT currently in stock?
What voltage specification is listed for PDTB123TT?
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