NXP Semiconductors_PDTC123JU
original

NXP Semiconductors
PDTC123JU

293-PDTC123JU
PDF Datasheet
TRANS PREBIAS NPN 200MW SOT323

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Tech Specifications

Status
Active
Max Vce (sat)
100mV @ 250μA, 5mA
Typical Gain (hFE) (Min)
100 @ 10mA, 10V
Estimated EOL Date
2024
Resistor - Emitter Base (R2) (Ohms)
47k
VCEO Maximum Collector-Emitter Breakdown Voltage
50V
Transistor Polarity
NPN - Pre-Biased
Introduction Date
May 27, 1999
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PDTC123JU Description

Reel - TR provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The Bipolar Transistor Arrays, Pre-Biased that the PDTC123JU belongs to can be classified under the Discrete Semiconductors. PDTC123JU is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. PDTC123JU provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. NXP Semiconductors plays a crucial role in ensuring the smooth flow of goods and meeting market demand. NXP Semiconductors is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, NXP Semiconductors builds trust with consumers and enhances the overall reputation of their products.

FAQ

What voltage specification is listed for PDTC123JU?
The listed voltage-related specification for PDTC123JU is 50V.
What is PDTC123JU?
Are there related or alternative parts for PDTC123JU?
What package or case is PDTC123JU available in?
Is PDTC123JU currently in stock?
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