NXP Semiconductors_PMCXB900UEZ
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NXP Semiconductors
PMCXB900UEZ

289-PMCXB900UEZ
PDF Datasheet
MOSFET N/P-CH 20V 0.6A 6DFN

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Tech Specifications

Operating Temperature
-55°C ~ 150°C (TJ)
FET Feature
Logic Level Gate
Configuration
N and P-Channel Complementary
Input Capacitance (Ciss) (Max) @ Vds
21.3pF @ 10V
Gate Charge (Qg) (Max) @ Vgs
0.7nC @ 4.5V
ECCN
EAR99
Mounting Type
Surface Mount
Product Status
Active
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PMCXB900UEZ Description

PMCXB900UEZ Description

The PMCXB900UEZ is a high-performance MOSFET from NXP Semiconductors, designed for applications requiring efficient power management and control. This N-channel, logic-level gate MOSFET operates at a maximum drain-to-source voltage (Vdss) of 20V and can handle continuous drain currents up to 0.6A. With a power rating of 265mW, it is suitable for a wide range of electronic devices.

PMCXB900UEZ Features

  • Logic Level Gate: The PMCXB900UEZ features a logic-level gate, enabling easy integration with digital logic circuits.
  • Low Input Capacitance: With a maximum input capacitance (Ciss) of 21.3pF at 10V, this MOSFET offers fast switching speeds and low power consumption.
  • Low Gate Charge: The maximum gate charge (Qg) is 0.7nC at 4.5V, contributing to efficient power usage.
  • Low Rds On: The maximum Rds On resistance is 620mOhm at 600mA and 4.5V, ensuring low conduction losses.
  • TrenchFET® Technology: This advanced technology provides improved performance and reliability compared to traditional MOSFETs.
  • Surface Mount: The PMCXB900UEZ is available in a surface-mount package,PCB。
  • RoHS3 Compliance: This product is compliant with the RoHS3 directive, making it suitable for environmentally conscious applications.

PMCXB900UEZ Applications

The PMCXB900UEZ is ideal for various applications where efficient power control and switching are required:

  1. Power Management: In power supply circuits and battery management systems, the PMCXB900UEZ can efficiently manage power distribution.
  2. Motor Control: Its low Rds On and high current handling capabilities make it suitable for driving small to medium-sized motors.
  3. Automotive Electronics: The robustness and reliability of this MOSFET make it suitable for automotive applications, such as infotainment systems and engine control modules.
  4. Industrial Automation: In industrial settings, the PMCXB900UEZ can be used in control systems for precise motor control and power regulation.

Conclusion of PMCXB900UEZ

The PMCXB900UEZ from NXP Semiconductors is a versatile and high-performance MOSFET that offers a combination of low power consumption, fast switching speeds, and robust performance. Its unique features, such as the logic-level gate and TrenchFET® technology, provide significant advantages over similar models. This MOSFET is well-suited for a wide range of applications, from power management to motor control, making it an excellent choice for designers looking to enhance the performance and efficiency of their electronic devices.

FAQ

What voltage specification is listed for PMCXB900UEZ?
The listed voltage-related specification for PMCXB900UEZ is 20V.
What operating temperature range does PMCXB900UEZ support?
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