NXP Semiconductors_PSMN2R0-60ES
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NXP Semiconductors
PSMN2R0-60ES

285-PSMN2R0-60ES
MOSFET N-CH 60V 120A I2PAK

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Tech Specifications

Status
Active
Max Gate Charge
137nC @ 10V
Continuous Drain Current at 25°C
120A (Tc)
Dimension
TO-262-3 Long Leads, I2Pak, TO-262AA
Max Input Capacitance
9997pF @ 30V
Gate-Source Threshold Voltage
4V @ 1mA
Mounting
Through Hole
Power Dissipation (Max)
338W (Tc)
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PSMN2R0-60ES Description

Tube/Rail provides mechanical support to the IC chip to ensure proper alignment and prevent damage due to vibration or shock. The RF FETs, MOSFETs that the PSMN2R0-60ES belongs to can be classified under the Discrete Semiconductors. PSMN2R0-60ES is used in a wide range of electronic devices, including computers, smartphones, televisions, cars, medical devices, and many others. PSMN2R0-60ES provides the computational power and functionality that enable these devices to perform their intended tasks. a vital part of the supply chain ecosystem. They convert raw materials or components into finished products, ensuring their availability for consumers or other businesses. NXP Semiconductors plays a crucial role in ensuring the smooth flow of goods and meeting market demand. NXP Semiconductors is responsible for ensuring the quality and safety of the products they produce. They implement quality control measures to meet industry standards and regulatory requirements. By maintaining high-quality standards, NXP Semiconductors builds trust with consumers and enhances the overall reputation of their products.

FAQ

Are there related or alternative parts for PSMN2R0-60ES?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
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What is PSMN2R0-60ES?
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