onsemi_1N3070TR

onsemi
1N3070TR  
Single Diodes

onsemi
1N3070TR
280-1N3070TR
Ersa
onsemi-1N3070TR-datasheets-9634749.pdf
DIODE GEN PURP 200V 500MA DO35
In Stock : 100

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1N3070TR Description

1N3070TR Description

The 1N3070TR from onsemi is a general-purpose fast recovery diode designed for high-efficiency rectification and switching applications. With a 200V reverse voltage (Vr) and 500mA average rectified current (Io), it offers robust performance in compact DO-35 packaging. Its fast recovery time (trr) of 50ns and low forward voltage drop (1V @ 100mA) minimize power losses, making it ideal for energy-sensitive circuits. The diode operates reliably up to 175°C junction temperature and features low reverse leakage (100nA @ 175V), ensuring stability in demanding environments. Compliant with ROHS3 and REACH standards, it is suitable for global markets.

1N3070TR Features

  • Fast Recovery: ≤50ns trr enhances efficiency in high-frequency circuits.
  • Low Capacitance: 5pF @ 0V reduces switching noise, ideal for RF and signal processing.
  • High Voltage Handling: 200V Vr supports medium-voltage applications.
  • Low Leakage: 100nA @ 175V ensures minimal power waste.
  • Wide Temperature Range: Operates up to 175°C, suitable for industrial and automotive use.
  • Compact DO-35 Package: Through-hole design for easy PCB integration.
  • Compliance: ROHS3, REACH Unaffected, and EAR99 for export flexibility.

1N3070TR Applications

  • Power Supplies: Efficient rectification in AC/DC converters and SMPS.
  • Switching Circuits: Fast recovery minimizes losses in inverters and motor drives.
  • Protection Diodes: Clamping and freewheeling in inductive load systems.
  • RF/Communication: Low capacitance suits high-frequency signal demodulation.
  • Automotive Electronics: Reliable performance under high-temperature conditions.

Conclusion of 1N3070TR

The 1N3070TR stands out for its fast recovery, low leakage, and high-temperature resilience, making it a versatile choice for power management and switching applications. Its balance of speed, voltage rating, and compact form factor outperforms similar diodes in efficiency-critical designs. Whether in industrial, automotive, or consumer electronics, this diode delivers consistent performance while meeting stringent environmental standards.

Tech Specifications

Speed
Capacitance @ Vr, F
Reverse Recovery Time (trr)
ECCN
Mounting Type
Product Status
Supplier Device Package
Current - Reverse Leakage @ Vr
Series
Package / Case
Technology
REACH Status
Voltage - Forward (Vf) (Max) @ If
Mfr
Voltage - DC Reverse (Vr) (Max)
HTSUS
Package
Current - Average Rectified (Io)
Operating Temperature - Junction
RoHS Status
Base Product Number
Moisture Sensitivity Level (MSL)
Peak Reverse Recovery Time (ns)
Configuration
PCB changed
HTS
ECCN (US)
PPAP
Maximum Power Dissipation (mW)
Automotive
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Supplier Package
Peak Forward Voltage (V)
Peak Non-Repetitive Surge Current (A)
EU RoHS
Maximum Continuous Forward Current (A)
Diameter
Maximum DC Reverse Voltage (V)
Peak Reverse Current (uA)
Peak Reverse Repetitive Voltage (V)
Package Length
Standard Package Name
Pin Count
Mounting
Type
Lead Shape
Part Status

1N3070TR Documents

Download datasheets and manufacturer documentation for 1N3070TR

Ersa Mult Dev Wafer Chgs 13/Apr/2020      
Ersa 1N3070      
Ersa Mult Devices 24/Oct/2017      
Ersa Logo 17/Aug/2017      
Ersa onsemi RoHS       Material Declaration 1N3070TR       onsemi REACH      

Shopping Guide

Payment Methods
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Shipping Rate
Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
Delivery Methods
Provide DHL, FedEx, UPS, EMS, SF Express and Registered Airmail International Delivery Service