The 1N3070TR from onsemi is a general-purpose fast recovery diode designed for high-efficiency rectification and switching applications. With a 200V reverse voltage (Vr) and 500mA average rectified current (Io), it offers robust performance in compact DO-35 packaging. Its fast recovery time (trr) of 50ns and low forward voltage drop (1V @ 100mA) minimize power losses, making it ideal for energy-sensitive circuits. The diode operates reliably up to 175°C junction temperature and features low reverse leakage (100nA @ 175V), ensuring stability in demanding environments. Compliant with ROHS3 and REACH standards, it is suitable for global markets.
The 1N3070TR stands out for its fast recovery, low leakage, and high-temperature resilience, making it a versatile choice for power management and switching applications. Its balance of speed, voltage rating, and compact form factor outperforms similar diodes in efficiency-critical designs. Whether in industrial, automotive, or consumer electronics, this diode delivers consistent performance while meeting stringent environmental standards.
Download datasheets and manufacturer documentation for 1N3070TR