onsemi_2N3906TAR
original

onsemi
2N3906TAR

276-2N3906TAR
PDF Datasheet
PNP BJT Transistor, TO-92, 40V, 200mA, 250MHz
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Tech Specifications

Package/Case
TO-92-3
Collector Base Voltage (VCBO)
-40V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
-250mV
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
400mV
Current Rating
-200mA
Emitter Base Voltage (VEBO)
-5V
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2N3906TAR Description

2N3906TAR Description

The 2N3906TAR is a PNP Bipolar Junction Transistor (BJT) manufactured by onsemi. It is designed for general-purpose applications, offering a balance of performance and cost-effectiveness. The device is available in a TO-92-3 package and is compliant with RoHS3 standards, making it suitable for environmentally conscious designs. With a maximum collector-emitter breakdown voltage of 40V and a maximum collector current of 200mA, the 2N3906TAR is capable of handling moderate power levels while maintaining a small footprint.

2N3906TAR Features

  • PNP Transistor Type: The 2N3906TAR is a PNP transistor, which is ideal for applications requiring amplification or switching in positive voltage rails.
  • High Frequency Capability: With a transition frequency of 250MHz, the 2N3906TAR is suitable for high-speed digital and analog applications.
  • Low Saturation Voltage: The device exhibits a low Vce(sat) of 400mV at 5mA and 50mA, ensuring efficient operation in saturation mode.
  • High Current Gain: A minimum hFE of 100 at 10mA and 1V ensures reliable amplification in various circuits.
  • Robust Power Handling: Capable of handling up to 625mW of power, the 2N3906TAR is suitable for applications requiring moderate power amplification.
  • Mounting Type: The through-hole mounting type provides a secure and reliable connection in PCB designs.

2N3906TAR Applications

The 2N3906TAR is ideal for a variety of applications, including:

  • Amplifier Circuits: Due to its moderate power handling and high-frequency capabilities, the 2N3906TAR is suitable for audio and signal amplification circuits.
  • Switching Applications: The low saturation voltage and high current gain make it an excellent choice for switching applications in positive voltage rails.
  • RF and Wireless Communication: The high transition frequency of 250MHz makes the 2N3906TAR suitable for RF and wireless communication applications, such as transmitters and receivers.
  • Automotive Electronics: The device's ability to handle moderate power levels and its small footprint make it suitable for various automotive electronic systems.

Conclusion of 2N3906TAR

The 2N3906TAR is a versatile PNP bipolar junction transistor that offers a balance of performance, power handling, and cost-effectiveness. Its high-frequency capabilities, low saturation voltage, and high current gain make it an excellent choice for a variety of applications, including amplifier circuits, switching applications, and RF communication systems. With its RoHS3 compliance and small footprint, the 2N3906TAR is an ideal solution for environmentally conscious and space-constrained designs.

FAQ

What package or case is 2N3906TAR available in?
2N3906TAR is available in the TO-92-3 package / case.
What voltage specification is listed for 2N3906TAR?
What is 2N3906TAR?
Does 2N3906TAR have quantity-based pricing?
What is the standard lead time for 2N3906TAR?
Availability (In Stock : 3903 )
Quantity Unit Price Ext. Price
5+ $0.09865 $0.49
50+ $0.08052 $4.03
150+ $0.07145 $10.72
500+ $0.06464 $32.32
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