onsemi

2N3906TAR  

Single Bipolar Transistors

2N3906TAR Description

The 2N3906TAR is a PNP Bipolar Junction Transistor (BJT) manufactured by onsemi. It is designed for general-purpose applications, offering a balance of performance and cost-effectiveness. The device is available in a TO-92-3 package and is compliant with RoHS3 standards, making it suitable for environmentally conscious designs. With a maximum collector-emitter breakdown voltage of 40V and a maximum collector current of 200mA, the 2N3906TAR is capable of handling moderate power levels while maintaining a small footprint.

2N3906TAR Features

• PNP Transistor Type: The 2N3906TAR is a PNP transistor, which is ideal for applications requiring amplification or switching in positive voltage rails.
• High Frequency Capability: With a transition frequency of 250MHz, the 2N3906TAR is suitable for high-speed digital and analog applications.
• Low Saturation Voltage: The device exhibits a low Vce(sat) of 400mV at 5mA and 50mA, ensuring efficient operation in saturation mode.
• High Current Gain: A minimum hFE of 100 at 10mA and 1V ensures reliable amplification in various circuits.
• Robust Power Handling: Capable of handling up to 625mW of power, the 2N3906TAR is suitable for applications requiring moderate power amplification.
• Mounting Type: The through-hole mounting type provides a secure and reliable connection in PCB designs.

2N3906TAR Applications

The 2N3906TAR is ideal for a variety of applications, including:

• Amplifier Circuits: Due to its moderate power handling and high-frequency capabilities, the 2N3906TAR is suitable for audio and signal amplification circuits.
• Switching Applications: The low saturation voltage and high current gain make it an excellent choice for switching applications in positive voltage rails.
• RF and Wireless Communication: The high transition frequency of 250MHz makes the 2N3906TAR suitable for RF and wireless communication applications, such as transmitters and receivers.
• Automotive Electronics: The device's ability to handle moderate power levels and its small footprint make it suitable for various automotive electronic systems.

Conclusion of 2N3906TAR

The 2N3906TAR is a versatile PNP bipolar junction transistor that offers a balance of performance, power handling, and cost-effectiveness. Its high-frequency capabilities, low saturation voltage, and high current gain make it an excellent choice for a variety of applications, including amplifier circuits, switching applications, and RF communication systems. With its RoHS3 compliance and small footprint, the 2N3906TAR is an ideal solution for environmentally conscious and space-constrained designs.

2N3906TAR Documents

Download datasheets and manufacturer documentation for 2N3906TAR

PCN Assembly/Origin :

2Nx/BCx/KSAx/KSPx/MPSx/PNx/SSx 29/Jun/2022      

Datasheets :

2N3906, MMBT3906, PZT3906      

PCN Packaging :

Mult Devices 24/Oct/2017      

HTML Datasheet :

2N3906, MMBT3906, PZT3906      

PCN Design/Specification :

Logo 17/Aug/2017       Copper Lead Frame 12/Oct/2007      

Environmental Information :

onsemi RoHS       Material Declaration 2N3906TAR