onsemi_2N3906TFR
original

onsemi
2N3906TFR

276-2N3906TFR
PDF Datasheet
PNP BJT Transistor, TO-92, 40V, 200mA, 250MHz, 625mW
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Tech Specifications

Package/Case
TO-92
Collector Base Voltage (VCBO)
-40V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
-400mV
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
400mV
Current Rating
-200mA
Emitter Base Voltage (VEBO)
-5V
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2N3906TFR Description

2N3906TFR Description

The 2N3906TFR is a high-performance PNP bipolar transistor designed and manufactured by onsemi. This device is known for its exceptional technical specifications and reliable performance, making it a popular choice in the electronics industry. With a maximum collector-emitter breakdown voltage of 40V and a maximum collector current of 200mA, the 2N3906TFR is well-suited for a variety of applications.

2N3906TFR Features

  • PNP Transistor Type: This transistor is designed with a PNP configuration, allowing for efficient current flow in specific circuit configurations.
  • High Frequency Capability: With a transition frequency of 250MHz, the 2N3906TFR can handle high-frequency applications with ease.
  • Low Saturation Voltage: The device boasts a low Vce saturation voltage of 400mV at 5mA and 50mA, which is beneficial for maintaining low power consumption in circuits.
  • Robust Current Gain: The minimum DC current gain (hFE) is 100 at 10mA and 1V, ensuring consistent performance across a wide range of operating conditions.
  • Power Handling: Capable of handling up to 625mW of power, the 2N3906TFR is suitable for applications requiring moderate power levels.
  • Mounting Type: The through-hole mounting type allows for easy integration into various circuit boards and designs.
  • Package: The tape and reel packaging makes the 2N3906TFR ideal for automated assembly processes, enhancing production efficiency.

2N3906TFR Applications

The 2N3906TFR is an ideal choice for a variety of applications due to its robust performance and technical specifications. Some specific use cases include:

  • General Purpose Amplification: The 2N3906TFR's high current gain and low saturation voltage make it suitable for general-purpose amplifiers in audio and signal processing circuits.
  • Switching Applications: Its PNP configuration and high breakdown voltage make it an excellent choice for switching applications in digital circuits.
  • RF Applications: The 250MHz transition frequency allows the 2N3906TFR to be used in radio frequency applications, such as in communication systems and wireless devices.

Conclusion of 2N3906TFR

The 2N3906TFR from onsemi is a versatile and reliable PNP bipolar transistor that offers excellent performance in a variety of applications. Its unique combination of high frequency capability, low saturation voltage, and robust current gain make it a standout choice for designers looking for a high-quality transistor solution. Whether used in general-purpose amplification, switching applications, or RF circuits, the 2N3906TFR consistently delivers reliable performance and value.

FAQ

What is the mounting type of 2N3906TFR?
2N3906TFR uses a Through Hole mounting style based on the listed product specifications.
What operating temperature range does 2N3906TFR support?
What is the standard lead time for 2N3906TFR?
What package or case is 2N3906TFR available in?
Are there related or alternative parts for 2N3906TFR?
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