onsemi_2N4401G
original

onsemi
2N4401G

276-2N4401G
PDF Datasheet
NPN BJT Transistor, 40V, 600mA, 250MHz, TO-92

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Tech Specifications

Package/Case
TO-92-3
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Saturation Voltage
750mV
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
750mV
Current Rating
600mA
Emitter Base Voltage (VEBO)
6V
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2N4401G Description

2N4401G Description

The 2N4401G is a high-performance NPN Bipolar Junction Transistor (BJT) manufactured by onsemi. It features a maximum collector-emitter voltage of 40V, a maximum collector current of 600mA, and a maximum power dissipation of 625mW. The device operates at a frequency of up to 250MHz, making it suitable for high-speed applications. The 2N4401G is available in a through-hole TO92 package and is packaged in bulk. It has a moisture sensitivity level of 1, indicating that it can be stored indefinitely without special precautions.

2N4401G Features

  • NPN transistor type for versatility in circuit design
  • 40V collector-emitter breakdown voltage for robust operation
  • 600mA maximum collector current for high current applications
  • 625mW maximum power dissipation for efficient power management
  • 250MHz frequency transition for high-speed performance
  • TO92 through-hole package for easy integration into PCB designs
  • Moisture sensitivity level 1 for unlimited storage without special precautions
  • DC current gain (hFE) of 100 at 150mA collector current and 1V collector-emitter voltage for reliable amplification

2N4401G Applications

The 2N4401G is ideal for a variety of applications where high-speed, high-current, and robust operation are required. Some specific use cases include:

  1. Amplifier circuits in audio equipment, where its high current gain and power dissipation capabilities can provide excellent audio performance.
  2. Switching circuits in power supplies, where its high voltage and current ratings can handle the demands of switching high-power loads.
  3. RF circuits in communication systems, where its high-frequency transition capabilities can support the demands of modern communication protocols.

Conclusion of 2N4401G

The 2N4401G is a versatile and high-performance NPN Bipolar Junction Transistor that offers excellent technical specifications and performance benefits. Its unique features, such as high current gain, high voltage and current ratings, and high-frequency transition capabilities, make it an ideal choice for a wide range of applications. However, it is important to note that the 2N4401G is now considered obsolete, which may limit its availability and suitability for new designs. Despite this, its robust performance and versatility make it a valuable option for existing applications where high-speed, high-current, and robust operation are required.

FAQ

What voltage specification is listed for 2N4401G?
The listed voltage-related specification for 2N4401G is 60V.
Are there related or alternative parts for 2N4401G?
What is 2N4401G?
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