onsemi_2N5190G
original

onsemi
2N5190G

276-2N5190G
PDF Datasheet
4A 40V NPN BJT Power Transistor TO-225
6 Weeks

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Tech Specifications

Package/Case
TO-225-3
Collector Base Voltage (VCBO)
40V
Collector Emitter Breakdown Voltage
40V
Collector Emitter Voltage (VCEO)
40V
Collector-emitter Voltage-Max
1.4V
Current Rating
4A
Emitter Base Voltage (VEBO)
5V
Frequency
2MHz
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2N5190G Description

2N5190G Description

The 2N5190G from onsemi is a high-performance NPN bipolar junction transistor (BJT) designed for robust power amplification and switching applications. With a collector-emitter voltage (Vce) rating of 40V and a maximum collector current (Ic) of 4A, this transistor is engineered to handle moderate power loads efficiently. Its low saturation voltage of 1.4V @ 1A, 4A ensures minimal power loss during operation, making it suitable for energy-sensitive designs. The device features a transition frequency of 2MHz, balancing speed and power for general-purpose use. Packaged in a TO-126 through-hole format, it offers reliable thermal performance and ease of integration into various circuits.

2N5190G Features

  • High Current Handling: Supports up to 4A continuous collector current, ideal for power stages.
  • Low Saturation Voltage: 1.4V @ 4A reduces heat dissipation and improves efficiency.
  • Moderate Frequency Response: 2MHz transition frequency suits audio and low-frequency switching.
  • Robust Construction: TO-126 package ensures durability and thermal stability.
  • Compliance: ROHS3 compliant and REACH unaffected, meeting environmental standards.
  • Wide DC Current Gain: hFE ≥ 25 @ 1.5A, 2V ensures consistent amplification.

2N5190G Applications

The 2N5190G excels in:

  • Power Amplifiers: Audio and RF stages requiring 4A current capability.
  • Switching Circuits: Relay drivers, motor controllers, and inductive load switches.
  • Voltage Regulators: Linear regulators and power supply pass elements.
  • Industrial Controls: Automation systems demanding high reliability and thermal performance.
  • Consumer Electronics: Appliances and tools where low saturation loss is critical.

Conclusion of 2N5190G

The 2N5190G stands out as a versatile NPN transistor for medium-power applications, combining efficiency, durability, and compliance with modern environmental standards. Its low saturation voltage and high current rating make it superior to generic BJTs in energy-sensitive designs. Whether used in amplification, switching, or regulation, this transistor delivers consistent performance, backed by onsemi's quality assurance. Engineers seeking a cost-effective, reliable solution for 4A power handling will find the 2N5190G an excellent choice.

FAQ

What voltage specification is listed for 2N5190G?
The listed voltage-related specification for 2N5190G is 40V.
What package or case is 2N5190G available in?
What is 2N5190G?
What operating temperature range does 2N5190G support?
What is the standard lead time for 2N5190G?
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