onsemi_2N5401G
original

onsemi
2N5401G

276-2N5401G
PDF Datasheet
PNP BJT Transistor, TO-92, 150V, 600mA, 300MHz

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Tech Specifications

Package/Case
TO-92-3
Collector Base Voltage (VCBO)
160V
Collector Emitter Breakdown Voltage
150V
Collector Emitter Saturation Voltage
500mV
Collector Emitter Voltage (VCEO)
150V
Collector-emitter Voltage-Max
500mV
Current Rating
-600mA
Emitter Base Voltage (VEBO)
5V
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2N5401G Description

Bipolar (BJT) Transistor PNP 150 V 600 mA 300MHz 625 mW Through Hole TO-92 (TO-226)

FAQ

What voltage specification is listed for 2N5401G?
The listed voltage-related specification for 2N5401G is 160V.
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What operating temperature range does 2N5401G support?
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