onsemi

2N5551RLRAG

2N5551RLRAG Description

The 2N5551RLRAG is a high-performance NPN transistor from onsemi, designed for a wide range of applications in the electronics industry. With a maximum collector-emitter breakdown voltage of 160V and a maximum collector current of 600mA, this device offers excellent electrical characteristics for demanding applications. The 2N5551RLRAG features a high-frequency transition of 300MHz, making it suitable for high-speed switching and amplification tasks. The device is packaged in a through-hole TO92 package, allowing for easy integration into various circuit designs.

2N5551RLRAG Features

• NPN transistor type for versatility in circuit design
• Maximum collector-emitter breakdown voltage of 160V for reliable operation in high-voltage applications
• Maximum collector current of 600mA for efficient power handling
• High-frequency transition of 300MHz for fast switching and amplification
• Through-hole TO92 package for easy integration into various circuit designs
• Maximum power dissipation of 625mW for extended operation under demanding conditions
• DC current gain (hFE) of 80 at 10mA, 5V for consistent performance
• Moisture sensitivity level (MSL) of 1 for unlimited storage time in controlled environments

2N5551RLRAG Applications

The 2N5551RLRAG is ideal for a variety of applications in the electronics industry, including:

1. Amplification circuits: The high-frequency transition and high DC current gain make this device suitable for audio and signal amplification applications.
2. Switching circuits: The high collector-emitter breakdown voltage and low saturation voltage make it an excellent choice for high-voltage switching applications.
3. Power electronics: The device's ability to handle up to 600mA of collector current and 625mW of power dissipation make it suitable for power electronics applications, such as motor control and power management.
4. Communication systems: The high-frequency transition allows the 2N5551RLRAG to be used in communication systems, such as radio frequency (RF) amplifiers and mixers.

Conclusion of 2N5551RLRAG

The 2N5551RLRAG is a versatile and high-performance NPN transistor from onsemi, offering excellent electrical characteristics for a wide range of applications in the electronics industry. Its high-frequency transition, high collector-emitter breakdown voltage, and low saturation voltage make it an ideal choice for high-speed switching, amplification, and power electronics applications. While the device is currently marked as obsolete, it remains a popular choice for engineers looking for a reliable and cost-effective solution in their designs.