onsemi

2N5551TA  

Single Bipolar Transistors

2N5551TA Description

The 2N5551TA from onsemi is a high-voltage NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Housed in a TO-92-3 package, it offers a robust 160V collector-emitter breakdown voltage (V_CEO) and a 600mA continuous collector current (I_C), making it suitable for medium-power circuits. With a transition frequency (f_T) of 100MHz, it delivers reliable performance in high-frequency applications. The device features a low collector-emitter saturation voltage (V_CE(sat)) of 200mV at 5mA base current (I_B) and 50mA collector current, ensuring efficient switching. Its DC current gain (h_FE) of 80 (min) at 10mA I_C and 5V V_CE provides stable amplification.

2N5551TA Features

• High Voltage Rating: 160V V_CEO for demanding applications.
• Low Saturation Voltage: 200mV @ 5mA I_B, 50mA I_C enhances efficiency in switching.
• Moderate Power Handling: 625mW maximum power dissipation balances performance and thermal management.
• Low Leakage Current: 50nA (I_CBO) ensures minimal power loss in off-state conditions.
• RoHS3 & REACH Compliant: Environmentally friendly and suitable for modern electronics.
• Wide Operating Range: Stable performance across varying temperatures and currents.

2N5551TA Applications

• Amplification: Ideal for audio amplifiers, signal processing, and RF stages due to its 100MHz f_T.
• Switching Circuits: Efficient in relay drivers, LED controllers, and power management thanks to low V_CE(sat).
• High-Voltage Systems: Used in CRT displays, power supplies, and industrial control systems requiring 160V tolerance.
• General-Purpose Electronics: Suitable for consumer electronics, automotive modules, and instrumentation due to its reliability.

Conclusion of 2N5551TA

The 2N5551TA stands out as a versatile NPN transistor with high voltage capability, low saturation loss, and stable gain, making it a preferred choice for both analog and switching applications. Its TO-92-3 package ensures easy integration, while RoHS3 compliance aligns with modern environmental standards. Whether used in amplification, power control, or industrial systems, this transistor delivers consistent performance, offering engineers a dependable solution for diverse circuit designs.

2N5551TA Documents

Download datasheets and manufacturer documentation for 2N5551TA