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2N5551TF
276-2N5551TF
NPN BJT Transistor, 160V VCEO, 600mA IC, 300MHz fT, TO-92
9 Weeks
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Tech Specifications
Package/Case
TO-92-3
Collector Base Voltage (VCBO)
180V
Collector Emitter Breakdown Voltage
160V
Collector Emitter Saturation Voltage
200mV
Collector Emitter Voltage (VCEO)
160V
Collector-emitter Voltage-Max
200mV
Contact Plating
Tin, Matte
Current Rating
600mA
2N5551TF Description
Bipolar (BJT) Transistor NPN 160 V 600 mA 100MHz 625 mW Through Hole TO-92-3
FAQ
What voltage specification is listed for 2N5551TF?
The listed voltage-related specification for 2N5551TF is 180V.
What operating temperature range does 2N5551TF support?
Are there related or alternative parts for 2N5551TF?
What is the mounting type of 2N5551TF?
Is 2N5551TF currently in stock?
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