onsemi_2N5551YBU
original

onsemi
2N5551YBU

276-2N5551YBU
AMP GP NPN 160V 600MA TO-92
15 Weeks

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ISO9001
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ISO45001
ISO14001
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Tech Specifications

Package/Case
TO-226-3
Collector Base Voltage (VCBO)
180V
Collector Emitter Breakdown Voltage
160V
Collector Emitter Saturation Voltage
200mV
Collector-emitter Voltage-Max
200mV
Current Rating
600mA
Emitter Base Voltage (VEBO)
6V
Gain Bandwidth Product
300MHz
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2N5551YBU Description

Bipolar (BJT) Transistor NPN 160 V 600 mA 100MHz 625 mW Through Hole TO-92-3

FAQ

What operating temperature range does 2N5551YBU support?
2N5551YBU has an operating temperature range of 150°C.
What is 2N5551YBU?
What is the standard lead time for 2N5551YBU?
What is the mounting type of 2N5551YBU?
Is 2N5551YBU currently in stock?
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