onsemi_2N6491G
original

onsemi
2N6491G

276-2N6491G
PDF Datasheet
NPN BJT 80V 15A TO-220 Power Transistor
14 Weeks

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Tech Specifications

Package/Case
TO-220-3
Collector Base Voltage (VCBO)
90V
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
3.5V
Collector Emitter Voltage (VCEO)
80V
Collector-emitter Voltage-Max
3.5V
Contact Plating
Tin, Matte
Current Rating
15A
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2N6491G Description

2N6491G Description

The 2N6491G is a PNP bipolar junction transistor (BJT) produced by onsemi, designed for high-power applications. With a maximum collector current (Ic) of 15 A and a collector-emitter breakdown voltage (Vce) of 80 V, this device offers robust performance in demanding electronic circuits. The 2N6491G features a through-hole mounting type and is packaged in a tube, making it suitable for a wide range of applications.

2N6491G Features

  • High Power Handling: Capable of handling up to 1.8 W of power, the 2N6491G is ideal for high-power applications.
  • Low Saturation Voltage: With a maximum Vce saturation voltage of 3.5 V at 5 A, this transistor offers low power dissipation and high efficiency.
  • High Current Gain: A minimum DC current gain (hFE) of 20 at 5 A and 4 V ensures reliable switching and amplification.
  • Wide Operating Frequency: The 2N6491G operates at a frequency of up to 5 MHz, making it suitable for high-speed applications.
  • RoHS Compliance: This device is compliant with the RoHS3 directive, making it suitable for environmentally friendly designs.

2N6491G Applications

The 2N6491G is ideal for various applications where high power and current handling are required. Some specific use cases include:

  • Power Amplifiers: Due to its high current and power ratings, the 2N6491G is suitable for use in power amplifiers in audio and communication systems.
  • Switching Regulators: The low saturation voltage and high current gain make it an excellent choice for switching regulators in power supply circuits.
  • Motor Control: The 2N6491G can be used in motor control applications, such as in industrial automation and robotics, where high current and power handling are essential.

Conclusion of 2N6491G

The 2N6491G from onsemi is a high-performance PNP bipolar junction transistor designed for demanding applications requiring high power and current handling. Its unique features, such as low saturation voltage, high current gain, and wide operating frequency, make it an excellent choice for power amplifiers, switching regulators, and motor control applications. With its RoHS compliance and robust performance, the 2N6491G is a reliable and environmentally friendly option for your high-power electronic designs.

FAQ

What operating temperature range does 2N6491G support?
2N6491G has an operating temperature range of 150°C.
What is the standard lead time for 2N6491G?
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