onsemi_2N7000-D26Z
original

onsemi
2N7000-D26Z

278-2N7000-D26Z
PDF Datasheet
MOSFET N-CH 60V 200MA TO92-3
10 Weeks

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Tech Specifications

FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
50 pF @ 25 V
Product Status
Active
Supplier Device Package
TO-92-3
Drain to Source Voltage (Vdss)
60 V
Power Dissipation (Max)
400mW (Ta)
Package / Case
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Technology
MOSFET (Metal Oxide)
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2N7000-D26Z Description

2N7000-D26Z Description

The 2N7000-D26Z is a high-performance MOSFET (Metal Oxide) transistor designed and manufactured by onsemi. This N-channel device offers a unique combination of technical specifications and performance benefits that make it ideal for a wide range of applications. With an active product status and REACH unaffected status, the 2N7000-D26Z is compliant with the latest environmental regulations and is suitable for use in various electronic devices.

2N7000-D26Z Features

  • Drain to Source Voltage (Vdss): 60V
  • Power Dissipation (Max): 400mW (Ta)
  • Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
  • Vgs (Max): ±20V
  • Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 3V @ 1mA
  • Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Mounting Type: Through Hole
  • Package: Tape & Reel (TR)
  • Moisture Sensitivity Level (MSL): Not Applicable
  • RoHS Status: ROHS3 Compliant
  • ECCN: EAR99
  • HTSUS: 8541.21.0095

The 2N7000-D26Z's unique features include its high drain to source voltage, low input capacitance, and low Rds On, making it an excellent choice for high-frequency and low-power applications. Its through-hole mounting type and tape & reel packaging make it easy to integrate into various electronic devices.

2N7000-D26Z Applications

The 2N7000-D26Z is ideal for use in a wide range of applications, including:

  1. Audio Amplifiers: Its low Rds On and high drain current make it suitable for use in audio amplifiers, providing efficient power dissipation and improved audio quality.
  2. Power Supplies: The 2N7000-D26Z's high drain to source voltage and low Rds On make it an excellent choice for power supply applications, ensuring efficient power delivery and reduced power loss.
  3. Automotive Electronics: With its high drain current and low Rds On, the 2N7000-D26Z is ideal for use in automotive electronics, such as ignition systems and power management circuits.
  4. Industrial Control Systems: The 2N7000-D26Z's high drain to source voltage and low Rds On make it suitable for use in industrial control systems, providing reliable performance in demanding environments.

Conclusion of 2N7000-D26Z

The 2N7000-D26Z is a versatile and high-performance MOSFET transistor that offers a unique combination of technical specifications and performance benefits. Its low Rds On, high drain to source voltage, and low input capacitance make it an ideal choice for a wide range of applications, including audio amplifiers, power supplies, automotive electronics, and industrial control systems. With its active product status, REACH unaffected status, and RoHS3 compliance, the 2N7000-D26Z is a reliable and environmentally friendly solution for your electronic device needs.

FAQ

Does 2N7000-D26Z have quantity-based pricing?
Yes. 2N7000-D26Z currently has 3 pricing tier(s), starting from 5 units.
What is the mounting type of 2N7000-D26Z?
Is 2N7000-D26Z currently in stock?
What voltage specification is listed for 2N7000-D26Z?
What is the standard lead time for 2N7000-D26Z?
Availability (In Stock : 224 )
Quantity Unit Price Ext. Price
5+ $0.30659 $1.53
50+ $0.24284 $12.14
150+ $0.21553 $32.33
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