onsemi

2N7002LT7G

2N7002LT7G Description

The 2N7002LT7G is a high-performance N-channel MOSFET designed by onsemi. With a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 115mA at 25°C, this device is ideal for a wide range of applications. The 2N7002LT7G boasts a low on-resistance (Rds On) of 7.5 Ohms at 500mA and 10V, ensuring efficient power dissipation of up to 225mW at ambient temperature. This MOSFET is designed for surface mount applications and is available in a compact SOT23-3 package.

2N7002LT7G Features

• Low On-Resistance: The 2N7002LT7G offers a low Rds On of 7.5 Ohms at 500mA and 10V, reducing power loss and improving efficiency.
• High Drain-to-Source Voltage: With a Vdss of 60V, this MOSFET can handle high-voltage applications with ease.
• Low Gate Threshold Voltage: The Vgs(th) of 2.5V at 250µA ensures reliable switching performance.
• Robust Power Dissipation: Capable of dissipating up to 225mW at ambient temperature, the 2N7002LT7G is suitable for power-sensitive applications.
• Surface Mount Technology: Designed for surface mount applications, this MOSFET is ideal for compact and space-constrained designs.
• Compliance: The 2N7002LT7G is RoHS3 compliant and REACH unaffected, ensuring environmental and regulatory compliance.

2N7002LT7G Applications

The 2N7002LT7G is ideal for various applications where high performance, low power loss, and compact design are critical. Some specific use cases include:

• Low-Power Switching Applications: Due to its low on-resistance and high drain current, the 2N7002LT7G is suitable for low-power switching applications.
• Power Management Circuits: The high drain-to-source voltage and low gate threshold voltage make this MOSFET ideal for power management circuits in electronic devices.
• Automotive Electronics: The 2N7002LT7G can be used in automotive electronics, such as power windows and seat adjustments, where high voltage and reliability are essential.
• Industrial Controls: This MOSFET is suitable for industrial control applications, such as motor drives and solenoid controls, where high voltage and low power loss are required.

Conclusion of 2N7002LT7G

The 2N7002LT7G is a versatile and high-performance N-channel MOSFET that offers a unique combination of low on-resistance, high drain-to-source voltage, and compact design. Its low power loss, robust power dissipation, and compliance with environmental regulations make it an ideal choice for a wide range of applications, including low-power switching, power management circuits, automotive electronics, and industrial controls. With its advanced features and performance benefits, the 2N7002LT7G stands out as a superior option in the MOSFET market.