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2SA1962RTU
276-2SA1962RTU
PDF Datasheet
PNP BJT Transistor, 250V, 17A, 130W, 30MHz, Through Hole
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Tech Specifications
Collector Base Voltage (VCBO)
-250V
Collector Emitter Breakdown Voltage
250V
Collector Emitter Voltage (VCEO)
250V
Collector-emitter Voltage-Max
3V
Contact Plating
Tin, Matte
Emitter Base Voltage (VEBO)
-5V
Frequency
30MHz
Gain Bandwidth Product
30MHz
2SA1962RTU Description
Bipolar (BJT) Transistor PNP 250 V 17 A 30MHz 130 W Through Hole TO-3P
FAQ
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