onsemi_2SA2016-TD-E
original

onsemi
2SA2016-TD-E

276-2SA2016-TD-E
Bipolar Transistor, -50V, -7A, Low VCE(sat), (PNP)NPN Single PCP, SOT-89 / PCP-1, 1000-REEL
26 Weeks

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Tech Specifications

Package/Case
SOT-89-3
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
240mV
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
400mV
Emitter Base Voltage (VEBO)
6V
Gain Bandwidth Product
330MHz
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2SA2016-TD-E Description

2SA2016-TD-E Description

The 2SA2016-TD-E is a high-performance PNP bipolar transistor from onsemi, designed for a wide range of applications in the electronics industry. With an operating temperature of 150°C (TJ) and a frequency transition of 330MHz, this device offers excellent performance in high-temperature and high-frequency environments. The 2SA2016-TD-E features a maximum collector current of 7A and a collector-emitter breakdown voltage of 50V, making it suitable for power applications. The device is surface mountable and comes in a PCP package, ensuring easy integration into various designs.

2SA2016-TD-E Features

  • High Operating Temperature: The 2SA2016-TD-E can operate at temperatures up to 150°C (TJ), making it ideal for high-temperature applications.
  • High Frequency Transition: With a frequency transition of 330MHz, this device is well-suited for high-frequency applications.
  • High Collector Current: The 2SA2016-TD-E can handle a maximum collector current of 7A, making it suitable for power applications.
  • Collector-Emitter Breakdown Voltage: This device has a collector-emitter breakdown voltage of 50V, ensuring reliable operation in high-voltage environments.
  • Surface Mountable: The 2SA2016-TD-E is surface mountable, allowing for easy integration into various designs.
  • PCP Package: The device comes in a PCP package, ensuring compatibility with a wide range of applications.

2SA2016-TD-E Applications

The 2SA2016-TD-E is ideal for a variety of applications, including:

  1. Power Amplifiers: Due to its high collector current and breakdown voltage, the 2SA2016-TD-E is well-suited for power amplifier applications.
  2. Switching Applications: The device's high frequency transition makes it ideal for switching applications, such as in power supplies and motor controls.
  3. High-Temperature Environments: The 2SA2016-TD-E's ability to operate at high temperatures makes it suitable for applications in harsh environments, such as automotive and industrial systems.

Conclusion of 2SA2016-TD-E

The 2SA2016-TD-E is a versatile and high-performance PNP bipolar transistor from onsemi, offering excellent technical specifications and performance benefits. Its high operating temperature, high frequency transition, and high collector current make it ideal for a wide range of applications, including power amplifiers, switching applications, and high-temperature environments. With its surface mountability and PCP package, the 2SA2016-TD-E is easy to integrate into various designs, making it a reliable choice for your electronic projects.

FAQ

What is the standard lead time for 2SA2016-TD-E?
The standard lead time for 2SA2016-TD-E is 26 Weeks.
Are there related or alternative parts for 2SA2016-TD-E?
What package or case is 2SA2016-TD-E available in?
What is 2SA2016-TD-E?
What voltage specification is listed for 2SA2016-TD-E?
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