onsemi_2SB1215S-TL-E
original

onsemi
2SB1215S-TL-E

276-2SB1215S-TL-E
PDF Datasheet
Bipolar Transistor, -100V, -3A, Low VCE(sat), PNP Single, TP/TP-FA, DPAK / TP-FA, 700-REEL
9 Weeks

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Tech Specifications

Package/Case
TO-252-3
Collector Base Voltage (VCBO)
120V
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
-200mV
Collector Emitter Voltage (VCEO)
100V
Collector-emitter Voltage-Max
500mV
Emitter Base Voltage (VEBO)
-6V
Frequency
130MHz
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2SB1215S-TL-E Description

2SB1215S-TL-E Description

The 2SB1215S-TL-E is a high-performance PNP bipolar transistor from onsemi, designed for a wide range of applications in the electronics industry. With an operating temperature of 150°C (TJ) and a frequency transition of 130MHz, this device offers excellent performance in demanding environments. The maximum collector current (Ic) is 3A, and it features a low Vce saturation of 500mV @ 150mA, 1.5A. The device is surface mountable and has a collector-emitter breakdown voltage of 100V.

2SB1215S-TL-E Features

  • Technical Specifications: The 2SB1215S-TL-E boasts a maximum power rating of 1W, making it suitable for high-power applications. It has a minimum DC current gain (hFE) of 140 @ 500mA, 5V, ensuring reliable operation. The device is RoHS3 compliant and REACH unaffected, making it environmentally friendly.

  • Unique Advantages: Compared to similar models, the 2SB1215S-TL-E offers a higher frequency transition and lower Vce saturation, providing improved performance in high-speed and low-voltage applications. Its high operating temperature and collector-emitter breakdown voltage make it ideal for use in harsh environments.

2SB1215S-TL-E Applications

The 2SB1215S-TL-E is ideal for various applications, including:

  1. Power Amplifiers: Its high power rating and low Vce saturation make it suitable for use in power amplifiers, where high efficiency and low distortion are required.

  2. Switching Applications: The device's high frequency transition and low Vce saturation make it ideal for use in switching applications, where fast switching times and low power dissipation are essential.

  3. Automotive Electronics: The 2SB1215S-TL-E's high operating temperature and collector-emitter breakdown voltage make it suitable for use in automotive electronics, where reliability and durability are crucial.

Conclusion of 2SB1215S-TL-E

In conclusion, the 2SB1215S-TL-E is a high-performance PNP bipolar transistor from onsemi that offers excellent technical specifications and unique advantages over similar models. Its high frequency transition, low Vce saturation, and high operating temperature make it ideal for a wide range of applications in the electronics industry, including power amplifiers, switching applications, and automotive electronics. With its RoHS3 compliance and REACH unaffected status, the 2SB1215S-TL-E is also an environmentally friendly choice for your next project.

FAQ

What operating temperature range does 2SB1215S-TL-E support?
2SB1215S-TL-E has an operating temperature range of 150°C.
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What is the standard lead time for 2SB1215S-TL-E?
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