


onsemi
2SC3646T-TD-E
276-2SC3646T-TD-E
PDF Datasheet
Bipolar Transistor, 100V, 1A, Low VCE(sat), (PNP)NPN Single PCP hFE = 200 - 400, SOT-89 / PCP-1, 1000-REEL
8 Weeks
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Package/Case
TO-243AA
Collector Base Voltage (VCBO)
120V
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
100mV
Collector-emitter Voltage-Max
400mV
Emitter Base Voltage (VEBO)
6V
Gain Bandwidth Product
120MHz
Height
1.5mm
2SC3646T-TD-E Description
Bipolar (BJT) Transistor NPN 100 V 1 A 120MHz 500 mW Surface Mount PCP
FAQ
What package or case is 2SC3646T-TD-E available in?
2SC3646T-TD-E is available in the TO-243AA package / case.
What voltage specification is listed for 2SC3646T-TD-E?
What operating temperature range does 2SC3646T-TD-E support?
Is 2SC3646T-TD-E currently in stock?
What is the standard lead time for 2SC3646T-TD-E?



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