onsemi

2SC4027S-E

2SC4027S-E Description

The 2SC4027S-E is a high-performance NPN bipolar transistor designed and manufactured by onsemi. This device is engineered to deliver exceptional performance in a wide range of applications, including power amplification, switching, and signal processing. With an operating temperature of 150°C (TJ) and a maximum collector-emitter breakdown voltage of 160V, the 2SC4027S-E is well-suited for high-temperature and high-voltage environments.

2SC4027S-E Features

• High Operating Temperature: The 2SC4027S-E can operate at temperatures up to 150°C (TJ), making it ideal for applications in harsh environments.
• High Frequency Performance: With a transition frequency of 120MHz, this transistor is suitable for high-speed switching and signal processing applications.
• High Current Handling: The 2SC4027S-E can handle a maximum collector current of 1.5A, making it suitable for power amplification applications.
• Low Saturation Voltage: The Vce saturation voltage is as low as 450mV @ 50mA and 500mA, which reduces power dissipation and improves efficiency.
• High DC Current Gain: The minimum DC current gain (hFE) is 100 @ 100mA, 5V, ensuring reliable operation in various circuit configurations.
• Through-Hole Mounting: The through-hole mounting type provides a secure and robust connection in printed circuit board (PCB) designs.

2SC4027S-E Applications

The 2SC4027S-E is an ideal choice for various applications due to its high performance and robust features:

1. Power Amplification: Its high current handling and low saturation voltage make it suitable for power amplifiers in audio and communication systems.
2. Switching Applications: The high transition frequency and low saturation voltage make it ideal for high-speed switching applications in digital circuits.
3. Signal Processing: The high operating temperature and high current handling capabilities make it suitable for signal processing in industrial and automotive applications.

Conclusion of 2SC4027S-E

The 2SC4027S-E is a versatile and high-performance NPN bipolar transistor that offers a unique combination of high operating temperature, high frequency performance, and high current handling capabilities. Its low saturation voltage and high DC current gain make it an excellent choice for power amplification, switching, and signal processing applications. While the product is currently obsolete, its unique features and advantages make it a valuable option for legacy systems and applications requiring its specific performance characteristics.