onsemi

2SC5226A-4-TL-E

2SC5226A-4-TL-E Description

The 2SC5226A-4-TL-E is a high-performance NPN Bipolar RF Transistor designed and manufactured by onsemi. This device is known for its exceptional performance in high-frequency applications, making it a popular choice for RF engineers. With a maximum operating temperature of 150°C (TJ), it is well-suited for demanding environments. The 2SC5226A-4-TL-E boasts a transition frequency of 7 GHz, a maximum collector current of 70 mA, and a maximum collector-emitter breakdown voltage of 10V. It is designed for surface mount applications and is currently active in the market.

2SC5226A-4-TL-E Features

• High Frequency Performance: With a transition frequency of 7 GHz, the 2SC5226A-4-TL-E is ideal for high-frequency applications, providing excellent signal integrity.
• Robust Power Handling: Capable of handling up to 150 mW of power, this transistor is suitable for applications requiring high power amplification.
• Low Noise Figure: The 2SC5226A-4-TL-E has a typical noise figure of 1 dB at 1 GHz, ensuring minimal signal degradation.
• High Gain: Offering a gain of 12 dB, this transistor is an excellent choice for applications requiring high amplification.
• Reliable Current Gain: With a minimum DC current gain (hFE) of 90 at 20 mA, 5V, the 2SC5226A-4-TL-E provides consistent performance.
• RoHS Compliance: This device is compliant with RoHS3 standards, making it an environmentally friendly choice for electronic designs.

2SC5226A-4-TL-E Applications

The 2SC5226A-4-TL-E is an ideal choice for a variety of applications, including:

• RF Amplifiers: Due to its high gain and low noise figure, this transistor is perfect for use in RF amplifiers, ensuring clear signal transmission.
• Communication Systems: Its high-frequency capabilities make it suitable for use in communication systems, such as radio and satellite communications.
• Automotive Radar: The 2SC5226A-4-TL-E's robust performance at high temperatures and high frequencies make it an excellent choice for automotive radar systems.
• Industrial Controls: This transistor's reliability and performance make it suitable for use in industrial control systems, where high-frequency signal processing is required.

Conclusion of 2SC5226A-4-TL-E

The 2SC5226A-4-TL-E is a high-performance NPN Bipolar RF Transistor that offers exceptional performance in high-frequency applications. Its combination of high gain, low noise figure, and robust power handling make it an ideal choice for a variety of applications, including RF amplifiers, communication systems, automotive radar, and industrial controls. With its RoHS compliance and reliable performance, the 2SC5226A-4-TL-E is a trusted solution for demanding electronic designs.