onsemi_2SC5227A-4-TB-E
original

onsemi
2SC5227A-4-TB-E

283-2SC5227A-4-TB-E
PDF Datasheet
NPN RF Transistor, 7GHz, 10V, 70mA, TO-236-3

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Tech Specifications

Package/Case
TO-236-3
Collector Base Voltage (VCBO)
20V
Collector Emitter Breakdown Voltage
10V
Collector Emitter Voltage (VCEO)
10V
Contact Plating
Tin, Matte
Emitter Base Voltage (VEBO)
2V
Frequency
7GHz
Gain
12dB
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2SC5227A-4-TB-E Description

2SC5227A-4-TB-E Description

The 2SC5227A-4-TB-E is an NPN Bipolar RF Transistor from onsemi, designed for high-frequency applications. It features a maximum collector-emitter breakdown voltage of 10V, a maximum power rating of 200mW, and an impressive transition frequency of 7GHz. With a surface-mount package, this transistor is ideal for compact and efficient designs. The device is RoHS3 compliant and REACH unaffected, ensuring compliance with environmental regulations.

2SC5227A-4-TB-E Features

  • Operating Temperature: 150°C (TJ), allowing for reliable performance in high-temperature environments.
  • Frequency - Transition: 7GHz, suitable for high-frequency communication systems.
  • Current - Collector (Ic) (Max): 70mA, providing sufficient current for various applications.
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V, ensuring consistent performance.
  • Noise Figure (dB Typ @ f): 1dB @ 1GHz, offering low noise levels for clear signal transmission.
  • Gain: 12dB, providing high amplification for improved signal strength.

2SC5227A-4-TB-E Applications

The 2SC5227A-4-TB-E is ideal for various high-frequency applications, including:

  • RF Amplifiers: Its high transition frequency and low noise figure make it suitable for amplifying signals in communication systems.
  • Receiver Front-Ends: The device's high gain and low noise figure are beneficial for receiving weak signals in radio and satellite communication systems.
  • Transmitter Circuits: Its high power rating and gain make it suitable for transmitting signals in wireless communication systems.

Conclusion of 2SC5227A-4-TB-E

The 2SC5227A-4-TB-E is a high-performance NPN Bipolar RF Transistor from onsemi, offering a combination of high transition frequency, low noise figure, and high gain. Its surface-mount package and compliance with environmental regulations make it an ideal choice for high-frequency communication systems. While the product is now obsolete, its unique features and advantages make it a valuable component for legacy systems and applications requiring high performance in compact designs.

FAQ

What is 2SC5227A-4-TB-E?
2SC5227A-4-TB-E is a Bipolar RF Transistors from onsemi. This product page provides its main specifications, pricing information, availability, and inquiry options.
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