onsemi

2SC5566-TD-E  

Single Bipolar Transistors

2SC5566-TD-E Description

The 2SC5566-TD-E is a high-performance NPN bipolar transistor designed and manufactured by onsemi. This device is engineered to deliver exceptional performance in a wide range of applications, thanks to its robust technical specifications and advanced features. The 2SC5566-TD-E is currently in active production, ensuring consistent availability and reliability for customers.

2SC5566-TD-E Features

• Technical Specifications: The 2SC5566-TD-E boasts an impressive operating temperature range of up to 150°C (TJ), making it suitable for high-temperature environments. It offers a transition frequency of 400MHz, providing excellent high-frequency performance. The device can handle a maximum collector current (Ic) of 4A, while its Vce saturation (Max) @ Ib, Ic is an ultra-low 225mV @ 100mA, 2A, ensuring efficient operation. The collector-emitter breakdown voltage (Max) is 50V, and it can deliver a maximum power of 1.3W.

• Unique Features and Advantages: The 2SC5566-TD-E stands out from similar models with its superior DC current gain (hFE) of at least 200 @ 500mA, 2V. This high gain ensures excellent amplification capabilities. The device also features a low moisture sensitivity level (MSL) of 1, indicating that it can be stored and handled without the need for special precautions against moisture. Furthermore, the 2SC5566-TD-E is compliant with the RoHS3 directive, making it an environmentally friendly choice.

2SC5566-TD-E Applications

The 2SC5566-TD-E is an ideal choice for a variety of applications due to its high performance and reliability. Some specific use cases include:

• Power Amplifiers: The device's high current handling capability and low saturation voltage make it suitable for power amplifier applications, where high efficiency and low distortion are critical.

• Switching Applications: The 2SC5566-TD-E's high transition frequency and low collector cutoff current make it an excellent choice for switching applications, ensuring fast switching times and low leakage currents.

• RF Applications: The device's high operating temperature range and excellent high-frequency performance make it ideal for use in RF applications, such as transmitters and receivers, where reliability and performance are crucial.

Conclusion of 2SC5566-TD-E

In conclusion, the 2SC5566-TD-E is a high-performance NPN bipolar transistor that offers a unique combination of technical specifications, performance benefits, and environmental compliance. Its superior features make it an ideal choice for a wide range of applications, including power amplifiers, switching applications, and RF applications. With its active product status and onsemi's reputation for quality, the 2SC5566-TD-E is a reliable and efficient solution for your electronic design needs.

2SC5566-TD-E Documents

Download datasheets and manufacturer documentation for 2SC5566-TD-E

Datasheets :

2SA2013/2SC5566      

HTML Datasheet :

2SA2013/2SC5566      

Environmental Information :

onsemi RoHS       Material Declaration 2SC5566-TD-E