onsemi_2SD1816S-E
original

onsemi
2SD1816S-E

276-2SD1816S-E
PDF Datasheet
Bipolar Transistor, 100V, 4A, Low VCE(sat), NPN Single, IPAK / TP, 500-BLKBG

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Tech Specifications

Package / Case
TO-251-3
Collector- Base Voltage VCBO
120V
Collector Emitter Breakdown Voltage
100V
Collector - Emitter Voltage VCEO
100V
Collector-emitter Voltage-Max
400mV
Contact Plating
Tin, Matte
Emitter- Base Voltage VEBO
6V
Frequency
180MHz
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2SD1816S-E Description

Bipolar (BJT) Transistor NPN 100 V 4 A 180MHz 1 W Through Hole TP

FAQ

What voltage specification is listed for 2SD1816S-E?
The listed voltage-related specification for 2SD1816S-E is 120V.
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What operating temperature range does 2SD1816S-E support?
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