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2SD1816S-E
276-2SD1816S-E
PDF Datasheet
Bipolar Transistor, 100V, 4A, Low VCE(sat), NPN Single, IPAK / TP, 500-BLKBG
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Tech Specifications
Package/Case
TO-251-3
Collector Base Voltage (VCBO)
120V
Collector Emitter Breakdown Voltage
100V
Collector Emitter Voltage (VCEO)
100V
Collector-emitter Voltage-Max
400mV
Contact Plating
Tin, Matte
Emitter Base Voltage (VEBO)
6V
Frequency
180MHz
2SD1816S-E Description
Bipolar (BJT) Transistor NPN 100 V 4 A 180MHz 1 W Through Hole TP
FAQ
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Yes. Related or alternative parts may be available on this page when relevant product data is provided.
What is 2SD1816S-E?
What voltage specification is listed for 2SD1816S-E?
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