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2SD1835S-AA
276-2SD1835S-AA
PDF Datasheet
Bipolar Transistor, 50V, 2A, Low VCE(sat), NPN Single NP hFE= 140-280, TO-92 / NP, 1500-REEL
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Tech Specifications
Package/Case
SIP
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
400mV
Collector-emitter Voltage-Max
400mV
Contact Plating
Tin, Matte
Emitter Base Voltage (VEBO)
6V
Height
5mm
2SD1835S-AA Description
Bipolar (BJT) Transistor NPN 50 V 2 A 150MHz 750 mW Through Hole 3-NP
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