onsemi_AFGB40T65SQDN
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onsemi
AFGB40T65SQDN

279-AFGB40T65SQDN
PDF Datasheet
IGBT, 650V FS4 High speed version, for OBC application in D2pak 650V, 40A, D2PAK, 800-REEL
15 Weeks

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ISO9001
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ISO45001
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Tech Specifications

Max Operating Temperature
175
Number of Terminals
2
Min Operating Temperature
-55
Terminal Position
SINGLE
JEDEC Package Code
TO-263AB
Number of Elements
1
Lead Free
Yes
REACH
not_compliant
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AFGB40T65SQDN Description

AFGB40T65SQDN Description

The AFGB40T65SQDN is a high-performance, 650V/40A FS4 IGBT TO263 A, manufactured by onsemi. This single IGBT is designed for automotive applications and offers exceptional technical specifications and performance benefits. With a reverse recovery time of 131 ns and a maximum collector-emitter breakdown voltage of 650V, the AFGB40T65SQDN is an ideal choice for demanding power electronics applications.

AFGB40T65SQDN Features

  • Technical Specifications:

    • Reverse Recovery Time (trr): 131 ns
    • Voltage - Collector Emitter Breakdown (Max): 650 V
    • Td (on/off) @ 25°C: 17.6ns/75.2ns
    • Current - Collector (Ic) (Max): 80 A
    • Current - Collector Pulsed (Icm): 160 A
    • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
    • Gate Charge: 76 nC
    • Power - Max: 238 W
    • Switching Energy: 858µJ (on), 229µJ (off)
  • Performance Benefits:

    • Low reverse recovery time for fast switching
    • High collector-emitter breakdown voltage for reliable operation
    • Low Vce(on) for efficient power conversion
    • Low switching energy for reduced power loss
  • Unique Features and Advantages:

    • Automotive-grade IGBT for high-reliability applications
    • Surface mount packaging for compact design
    • REACH Unaffected and RoHS3 Compliant for environmental compliance
    • Moisture Sensitivity Level (MSL) 1 for unlimited storage time

AFGB40T65SQDN Applications

The AFGB40T65SQDN is ideal for various automotive and industrial applications where high power, efficiency, and reliability are critical. Some specific use cases include:

  1. Electric Vehicle (EV) Charging Systems: The high power rating and low switching energy make it suitable for EV charging stations.
  2. Hybrid Electric Vehicles (HEVs): The AFGB40T65SQDN can be used in the power electronics of HEVs for efficient energy conversion.
  3. Industrial Motor Drives: The robust performance and high power rating make it suitable for industrial motor control applications.
  4. Renewable Energy Systems: The AFGB40T65SQDN can be used in solar inverters and wind power converters for efficient energy conversion.

Conclusion of AFGB40T65SQDN

The AFGB40T65SQDN is a high-performance, automotive-grade IGBT that offers exceptional technical specifications and performance benefits. Its unique features, such as low reverse recovery time, high collector-emitter breakdown voltage, and low switching energy, make it an ideal choice for demanding power electronics applications in the automotive and industrial sectors. With its compliance to environmental regulations and moisture sensitivity level, the AFGB40T65SQDN is a reliable and efficient solution for high-power applications.

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