onsemi

AFGHL75T65SQDT

AFGHL75T65SQDT Description

The AFGHL75T65SQDT is a high-performance, 650V/75A Trench Field Stop IGBT from onsemi, designed for automotive applications. With its robust technical specifications and excellent performance benefits, this IGBT is ideal for demanding power electronics applications.

AFGHL75T65SQDT Features

• Technical Specifications:

  • Reverse Recovery Time (trr): 75 ns
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Td (on/off) @ 25°C: 24ns/106ns
  • Current - Collector (Ic) (Max): 80 A
  • Current - Collector Pulsed (Icm): 300 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
  • Gate Charge: 136 nC
  • Power - Max: 375 W
  • Switching Energy: 2.12mJ (on), 1.14mJ (off)

• Performance Benefits:

  • Low on-state voltage drop (Vce(on)) for high efficiency
  • Fast switching times for reduced power losses
  • Low gate charge for improved gate drive efficiency

• Unique Features and Advantages:

  • Automotive-grade IGBT with robust performance
  • Trench Field Stop technology for improved ruggedness and reliability
  • Through-hole mounting for easy integration into existing designs

AFGHL75T65SQDT Applications

The AFGHL75T65SQDT is ideal for a wide range of automotive and industrial power electronics applications, including:

• Electric and hybrid vehicle inverters
• Battery management systems
• Motor control and drives
• Solar and wind power inverters
• Industrial power supplies

Conclusion of AFGHL75T65SQDT

The AFGHL75T65SQDT from onsemi is a high-performance, automotive-grade IGBT that offers excellent technical specifications, performance benefits, and unique features. Its low on-state voltage drop, fast switching times, and low gate charge make it an ideal choice for demanding power electronics applications in electric and hybrid vehicles, as well as industrial power supplies. With its robust performance and reliability, the AFGHL75T65SQDT is a trusted solution for your power electronics needs.