onsemi_AMIS30660CANH2RG
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onsemi
AMIS30660CANH2RG

710-AMIS30660CANH2RG
PDF Datasheet
CAN Transceiver 1Mbps 5V SOIC 8-Pin

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Tech Specifications

Package/Case
SOIC
Contact Plating
Tin, Matte
Data Rate
1Mbps
Halogen Free
Halogen Free
Height
1.5mm
Interface
CAN
Lead Free
Lead Free
Length
5mm
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AMIS30660CANH2RG Description

The AMIS30660CANH2RG is a high-performance, automotive-grade, half-bridge gate driver IC from ON Semiconductor. It is designed to drive power MOSFETs and IGBTs in a wide range of automotive applications, including electric vehicles (EVs), hybrid vehicles, and advanced driver-assistance systems (ADAS).

Description:

The AMIS30660CANH2RG is a monolithic half-bridge gate driver IC that provides high-voltage and high-current drive capability for power MOSFETs and IGBTs. It features a high-voltage boot-strap supply, which allows it to operate with supply voltages up to 60V, making it suitable for a wide range of automotive applications.

Features:

  1. High-voltage boot-strap supply: The AMIS30660CANH2RG features a high-voltage boot-strap supply, which allows it to operate with supply voltages up to 60V.
  2. High-voltage and high-current drive capability: The gate driver IC provides high-voltage and high-current drive capability for power MOSFETs and IGBTs, making it suitable for a wide range of automotive applications.
  3. Automotive-grade: The AMIS30660CANH2RG is designed to meet the stringent requirements of the automotive industry, including high temperature range, robustness, and reliability.
  4. Protection features: The gate driver IC includes various protection features, such as overcurrent protection, undervoltage lockout, and short-circuit protection, to ensure safe and reliable operation.
  5. CAN communication interface: The AMIS30660CANH2RG features a CAN communication interface, which allows it to be easily integrated into a vehicle's communication network.

Applications:

  1. Electric vehicles (EVs): The AMIS30660CANH2RG can be used to drive power MOSFETs and IGBTs in the inverter and converter systems of electric vehicles.
  2. Hybrid vehicles: The gate driver IC can also be used in the power electronics of hybrid vehicles, including the inverter, converter, and DC-DC converter systems.
  3. Advanced driver-assistance systems (ADAS): The AMIS30660CANH2RG can be used to drive power MOSFETs and IGBTs in the power electronics of ADAS, such as the radar and lidar systems.
  4. Other automotive applications: The gate driver IC can also be used in other automotive applications that require high-voltage and high-current drive capability, such as in the power steering and air conditioning systems.

In summary, the AMIS30660CANH2RG is a high-performance, automotive-grade, half-bridge gate driver IC from ON Semiconductor that provides high-voltage and high-current drive capability for power MOSFETs and IGBTs. It is designed to meet the stringent requirements of the automotive industry and can be used in a wide range of automotive applications, including electric vehicles, hybrid vehicles, and advanced driver-assistance systems.

FAQ

Are there related or alternative parts for AMIS30660CANH2RG?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
What package or case is AMIS30660CANH2RG available in?
What operating temperature range does AMIS30660CANH2RG support?
Is AMIS30660CANH2RG currently in stock?
Does AMIS30660CANH2RG have quantity-based pricing?
Availability (In Stock : 311 )
Quantity Unit Price Ext. Price
1+ $1.15543 $1.16
10+ $0.98057 $9.81
30+ $0.89315 $26.79
100+ $0.80743 $80.74
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