onsemi

ATP112-TL-H

ATP112-TL-H Description

The ATP112-TL-H from onsemi is a high-performance P-channel MOSFET designed for power management applications requiring robust efficiency and thermal stability. With a 60V drain-to-source voltage (Vdss) and 25A continuous drain current (Id), this device is optimized for medium-power switching tasks. Its ATPAK (2 Leads+Tab) surface-mount package ensures efficient thermal dissipation, supporting a maximum power dissipation of 40W (Tc) and an operating temperature range up to 150°C (TJ). Although marked as Obsolete, it remains a reliable choice for legacy designs due to its low on-resistance (43mOhm @ 13A, 10V) and high gate charge tolerance (33.5 nC @ 10V).

ATP112-TL-H Features

• Low Rds(On): 43mOhm at 13A/10V minimizes conduction losses, enhancing efficiency in high-current applications.
• High Voltage Tolerance: 60V Vdss and ±20V Vgs(max) provide flexibility in diverse power circuits.
• Robust Thermal Performance: ATPAK package with a 40W (Tc) power rating ensures reliability under thermal stress.
• Fast Switching: Input capacitance (Ciss) of 1450pF @ 20V and optimized gate charge enable rapid transitions.
• Compliance: ROHS3 Compliant and REACH Unaffected, meeting environmental standards.

ATP112-TL-H Applications

Ideal for:

• DC-DC Converters: Leveraging low Rds(On) for efficient power conversion in industrial and automotive systems.
• Load Switching: High current handling (25A) suits battery management and motor control circuits.
• Power Supplies: Stable performance in SMPS (Switched-Mode Power Supplies) and voltage regulation modules.
• Legacy Systems: Suitable for maintaining or upgrading older designs requiring P-channel MOSFETs with proven reliability.

Conclusion of ATP112-TL-H

The ATP112-TL-H combines onsemi's expertise in power MOSFETs with a balance of voltage tolerance, current capacity, and thermal resilience. While obsolete, its ATPAK packaging and low conduction losses make it a pragmatic choice for engineers prioritizing durability in high-efficiency power systems. For legacy or niche applications demanding P-channel performance, this MOSFET remains a technically viable solution.