onsemi

BAS21HT1G

The BAS21HT1G is a high-speed switching diode from ON Semiconductor. It is designed for use in a variety of high-speed switching applications, including RF switching and high-speed data communication.

Description:

The BAS21HT1G is a small-signal switching diode that features a low forward voltage drop and fast switching times. It is available in a compact SOT-23 plastic surface-mount package, making it suitable for use in a wide range of applications where space is at a premium.

Features:

• Low forward voltage drop: The BAS21HT1G has a low forward voltage drop of typically 0.8V at a forward current of 100mA.
• Fast switching times: The diode has a fast switching time of typically 25ns, making it suitable for use in high-speed switching applications.
• High current capability: The BAS21HT1G can handle a maximum forward current of 200mA.
• Low leakage current: The diode has a low reverse leakage current of typically 1pA at a reverse voltage of -5V.
• Small size: The SOT-23 package is compact and suitable for use in space-constrained applications.

Applications:

The BAS21HT1G is suitable for use in a variety of high-speed switching applications, including:

• RF switching in wireless communication systems
• High-speed data communication
• Switching regulator circuits
• High-speed switching power supplies
• Motor control circuits

In summary, the BAS21HT1G is a high-speed switching diode that offers a combination of low forward voltage drop, fast switching times, and high current capability in a compact package. It is suitable for use in a wide range of high-speed switching applications, including RF switching and high-speed data communication.