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BAS21TMR6T1G
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Tech Specifications
BAS21TMR6T1G Description
The BAS21TMR6T1G is a high-performance, low-capacitance, and low-leakage current diode from ON Semiconductor. It is designed to provide excellent performance in high-frequency switching applications and is ideal for use in a wide range of electronic devices.
Description:
The BAS21TMR6T1G is a high-speed switching diode that features a low forward voltage drop and a high switching speed. It has a maximum forward current rating of 200mA and a maximum reverse voltage rating of 75V. The diode has a low capacitance of 4pF, which makes it suitable for use in high-frequency applications.
Features:
- Low forward voltage drop
- High switching speed
- Low capacitance of 4pF
- Low leakage current
- Maximum forward current rating of 200mA
- Maximum reverse voltage rating of 75V
- Small package size
Applications:
The BAS21TMR6T1G is suitable for use in a wide range of electronic devices, including:
- RF and IF circuits
- High-frequency switching applications
- Power supply circuits
- Automotive electronics
- Telecom equipment
- Consumer electronics
Overall, the BAS21TMR6T1G is a high-performance diode that offers excellent performance in high-frequency switching applications. Its low capacitance and low leakage current make it an ideal choice for use in a wide range of electronic devices.
FAQ
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100+ | $0.03908 | $3.91 |
| 300+ | $0.03560 | $10.68 |
| 3000+ | $0.03343 | $100.29 |
| 6000+ | $0.03168 | $190.08 |
| 9000+ | $0.03080 | $277.20 |
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