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BAS21TMR6T1G  

Diode Arrays

The BAS21TMR6T1G is a high-performance, low-capacitance, and low-leakage current diode from ON Semiconductor. It is designed to provide excellent performance in high-frequency switching applications and is ideal for use in a wide range of electronic devices.

Description:

The BAS21TMR6T1G is a high-speed switching diode that features a low forward voltage drop and a high switching speed. It has a maximum forward current rating of 200mA and a maximum reverse voltage rating of 75V. The diode has a low capacitance of 4pF, which makes it suitable for use in high-frequency applications.

Features:

• Low forward voltage drop
• High switching speed
• Low capacitance of 4pF
• Low leakage current
• Maximum forward current rating of 200mA
• Maximum reverse voltage rating of 75V
• Small package size

Applications:

The BAS21TMR6T1G is suitable for use in a wide range of electronic devices, including:

• RF and IF circuits
• High-frequency switching applications
• Power supply circuits
• Automotive electronics
• Telecom equipment
• Consumer electronics

Overall, the BAS21TMR6T1G is a high-performance diode that offers excellent performance in high-frequency switching applications. Its low capacitance and low leakage current make it an ideal choice for use in a wide range of electronic devices.

BAS21TMR6T1G Documents

Download datasheets and manufacturer documentation for BAS21TMR6T1G

Datasheets :

BAS21TMR6T1G      

HTML Datasheet :

BAS21TMR6T1G      

Environmental Information :

onsemi RoHS       Material Declaration BAS21TMR6T1G       onsemi REACH