onsemi_BAS40-04LT1

onsemi
BAS40-04LT1  
Diode Arrays

onsemi
BAS40-04LT1
286-BAS40-04LT1
Ersa
onsemi-BAS40-04LT1-datasheets-13297173.pdf
DIODE ARR SCHOTT 40V 120MA SOT23
In Stock : 375010

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BAS40-04LT1 Description

BAS40-04LT1 Description

The BAS40-04LT1 from onsemi is a Schottky diode array designed for high-efficiency, low-power applications. This surface-mount device features 1 pair of series-connected Schottky diodes in a compact SOT-23 package, making it ideal for space-constrained designs. With a maximum reverse voltage (Vr) of 40V and a forward voltage (Vf) of 1V at 40mA, it offers low power loss and fast switching performance, suitable for small-signal and high-frequency circuits. Its average rectified current (Io) of 120mA per diode ensures reliable operation in low-current applications.

BAS40-04LT1 Features

  • Schottky Technology: Delivers low forward voltage drop and fast switching speeds, reducing energy loss.
  • Compact SOT-23 Package: Optimized for high-density PCB layouts.
  • Low Reverse Leakage: 1 µA at 25V, ensuring minimal power dissipation in standby modes.
  • 40V Reverse Voltage: Provides robust protection in low-voltage circuits.
  • 1 Pair Series Connection: Enables balanced performance in dual-diode configurations.
  • MSL 1 (Unlimited): Suitable for long-term storage without moisture sensitivity concerns.
  • REACH Unaffected: Compliant with environmental regulations.

BAS40-04LT1 Applications

  • Signal Clamping & Protection: Used in audio/video interfaces to prevent signal distortion.
  • High-Frequency Rectification: Ideal for RF detectors, mixers, and switching power supplies.
  • Logic Level Shifting: Ensures low-voltage drop in bidirectional voltage translation.
  • Portable Electronics: Fits wearables, IoT devices, and battery-powered systems due to low power consumption.
  • Automotive & Industrial Systems: Reliable performance in harsh environments with tight space constraints.

Conclusion of BAS40-04LT1

The BAS40-04LT1 stands out as a high-performance Schottky diode array for low-power, high-speed applications. Its compact form factor, low Vf, and minimal leakage make it superior to standard silicon diodes in efficiency-critical designs. While obsolete, it remains a viable choice for legacy systems or replacements. Engineers should consider this diode for space-saving, energy-efficient circuits requiring fast switching and reliable signal integrity.

Tech Specifications

Speed
ECCN
Mounting Type
Product Status
Supplier Device Package
Current - Reverse Leakage @ Vr
Series
Package / Case
Technology
REACH Status
Diode Configuration
Voltage - Forward (Vf) (Max) @ If
Mfr
Voltage - DC Reverse (Vr) (Max)
HTSUS
Package
Current - Average Rectified (Io) (per Diode)
Operating Temperature - Junction
RoHS Status
Base Product Number
Moisture Sensitivity Level (MSL)

BAS40-04LT1 Documents

Download datasheets and manufacturer documentation for BAS40-04LT1

Ersa BAS,SBAS40-04LT1G      
Ersa DK OBS NOTICE      
Ersa BAS,SBAS40-04LT1G      
Ersa Glue Mount Process 11/July/2008       Copper Wire 08/Jun/2009      
Ersa onsemi RoHS       onsemi REACH      

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