onsemi

BBS3002-TL-1E

BBS3002-TL-1E Description

The BBS3002-TL-1E from onsemi is a high-performance P-channel MOSFET designed for power management applications requiring robust efficiency and reliability. With a 60V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 100A at 25°C, this device is optimized for high-current switching. It features a low on-resistance (Rds On) of 5.8mOhm at 50A and 10V gate drive, minimizing conduction losses and improving thermal performance. Packaged in a D2PAK (TO-263) surface-mount format with Tape & Reel (TR) delivery, it is suitable for automated assembly processes. Although marked as Obsolete, its specifications remain competitive for legacy designs or replacements.

BBS3002-TL-1E Features

• High Current Handling: Supports 100A (Ta) continuous drain current, ideal for power-dense applications.
• Low Rds On: 5.8mOhm @ 50A, 10V ensures reduced power dissipation and higher efficiency.
• Robust Voltage Ratings: Vdss of 60V and Vgs(max) of ±20V for reliable operation under stress.
• Advanced Technology: MOSFET (Metal Oxide) construction with 90W (Tc) power dissipation capability.
• Compliance: ROHS3 Compliant, REACH Unaffected, and MSL 1 (Unlimited) for environmental and handling flexibility.
• Gate Charge & Capacitance: Qg(max) of 280nC @ 10V and Ciss(max) of 13200pF @ 20V balance switching speed and losses.

BBS3002-TL-1E Applications

• Power Supplies: High-efficiency DC-DC converters and voltage regulators.
• Motor Control: H-bridge configurations in industrial or automotive systems.
• Battery Management: Protection circuits and load switches in energy storage.
• Automotive Systems: Auxiliary power distribution and LED drivers.
• Industrial Equipment: High-current switching in relays and inverters.

Conclusion of BBS3002-TL-1E

The BBS3002-TL-1E offers a compelling blend of high current capacity, low Rds On, and robust voltage tolerance, making it a strong choice for demanding power applications. While obsolete, its D2PAK packaging and compliance with modern standards ensure compatibility with existing designs. Engineers seeking a proven P-channel MOSFET for high-efficiency systems should consider this device for legacy upgrades or replacements.