onsemi_BC807-25LT3G
original

onsemi
BC807-25LT3G

276-BC807-25LT3G
PDF Datasheet
PNP BJT Transistor, 45V VCEO, 500mA IC, 100MHz, SOT-23
25 Weeks

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Tech Specifications

Package/Case
SOT-23-3
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
-700mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
700mV
Emitter Base Voltage (VEBO)
5V
Frequency
100MHz
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BC807-25LT3G Description

BC807-25LT3G Description

The BC807-25LT3G is a PNP bipolar junction transistor (BJT) designed for high-frequency applications. Manufactured by onsemi, this single transistor is housed in a compact SOT23-3 package, making it ideal for surface-mount applications. With a maximum collector-emitter breakdown voltage of 45V and a maximum collector current of 500mA, the BC807-25LT3G offers excellent performance in a wide range of electronic circuits.

BC807-25LT3G Features

  • High Frequency Performance: The BC807-25LT3G boasts a frequency transition of 100MHz, making it suitable for high-speed switching applications.
  • Low Saturation Voltage: With a maximum Vce saturation of 700mV at 50mA and 500mA collector current, this transistor minimizes power dissipation in saturated conditions.
  • High DC Current Gain: A minimum hFE of 160 at 100mA collector current and 1V collector-emitter voltage ensures reliable amplification in various circuits.
  • Robust Power Handling: Capable of handling up to 300mW of power, the BC807-25LT3G is well-suited for demanding applications.
  • Low Collector Cutoff Current: A maximum collector cutoff current of 100nA (ICBO) contributes to low quiescent power consumption in standby modes.

BC807-25LT3G Applications

The BC807-25LT3G's combination of high frequency, low saturation voltage, and high current gain make it an ideal choice for:

  • Switching Regulators: The low Vce saturation and high current gain make this transistor suitable for efficient power conversion in switching regulators.
  • RF Amplifiers: The 100MHz frequency transition allows for use in high-frequency RF amplifiers, such as those found in communication systems.
  • Automotive Electronics: The robust power handling and high breakdown voltage make the BC807-25LT3G suitable for various automotive electronic applications, including ignition systems and power management.
  • Industrial Control: The BC807-25LT3G's performance characteristics make it well-suited for use in industrial control systems, where high reliability and performance are critical.

Conclusion of BC807-25LT3G

The BC807-25LT3G is a versatile PNP bipolar junction transistor that offers high-frequency performance, low saturation voltage, and high current gain in a compact SOT23-3 package. Its unique combination of features makes it an excellent choice for a wide range of applications, including switching regulators, RF amplifiers, automotive electronics, and industrial control systems. With its robust performance and compact form factor, the BC807-25LT3G is a valuable component for designers looking to optimize their electronic circuits.

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