onsemi_BC846BDW1T1G
original

onsemi
BC846BDW1T1G

277-BC846BDW1T1G
PDF Datasheet
Dual NPN BJT, 65V, 100mA, 100MHz, SOT-363-6
19 Weeks

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Tech Specifications

Package / Case
SOT-363-6
Collector- Base Voltage VCBO
80V
Collector Emitter Breakdown Voltage
65V
Collector Emitter Saturation Voltage
600mV
Collector - Emitter Voltage VCEO
65V
Collector-emitter Voltage-Max
600mV
Current Rating
100mA
Emitter- Base Voltage VEBO
6V
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BC846BDW1T1G Description

The BC846BDW1T1G is a NPN epitaxial planar transistor produced by ON Semiconductor. Here is a description of the model, its features, and its applications:

Description:

The BC846BDW1T1G is a small-signal NPN transistor used in a variety of applications. It is designed for low-power, high-frequency operation and features a high current gain and low noise characteristics.

Features:

  • NPN epitaxial planar transistor
  • High current gain (hFE) of 110 to 470
  • Low noise characteristics
  • Small signal, high-frequency operation
  • Suitable for a wide range of applications

Applications:

The BC846BDW1T1G is commonly used in a variety of applications, including:

  • General-purpose amplifiers
  • Switching applications
  • FM radio circuits
  • TV circuits
  • VCR circuits
  • Audio equipment
  • Automotive electronics
  • Telecommunication equipment

Overall, the BC846BDW1T1G is a versatile and reliable NPN transistor that is well-suited for a wide range of applications. Its high current gain and low noise characteristics make it an ideal choice for many electronic circuits.

FAQ

What operating temperature range does BC846BDW1T1G support?
BC846BDW1T1G has an operating temperature range of 150°C.
Is BC846BDW1T1G currently in stock?
What package or case is BC846BDW1T1G available in?
What voltage specification is listed for BC846BDW1T1G?
What is the standard lead time for BC846BDW1T1G?
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