onsemi
BC847BDW1T3G

277-BC847BDW1T3G
PDF Datasheet
Dual NPN BJT Transistor, 45V, 100mA, 100MHz, SOT-363
10 Weeks

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Tech Specifications

Package/Case
SOT-363-6
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
600mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
600mV
Current Rating
100mA
Emitter Base Voltage (VEBO)
6V
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BC847BDW1T3G Description

BC847BDW1T3G Description

The BC847BDW1T3G is a high-performance, dual NPN bipolar transistor array from onsemi, designed for a wide range of applications in the electronics industry. This device offers exceptional technical specifications, including a frequency transition of 100MHz, a maximum collector current (Ic) of 100mA, and a low Vce saturation of 600mV at 5mA and 100mA. With a maximum power rating of 380mW and a collector-emitter breakdown voltage of 45V, the BC847BDW1T3G delivers outstanding performance in various electronic circuits.

BC847BDW1T3G Features

  • High Frequency Transition: The BC847BDW1T3G boasts a frequency transition of 100MHz, making it suitable for high-speed switching applications.
  • Low Vce Saturation: With a Vce saturation of just 600mV at 5mA and 100mA, this device ensures efficient operation in low-voltage circuits.
  • Dual NPN Configuration: The BC847BDW1T3G features two NPN transistors in a single package, providing flexibility and space savings in circuit design.
  • Surface Mount Technology: This device is designed for surface mount applications, enabling compact and efficient placement on printed circuit boards.
  • RoHS Compliance: The BC847BDW1T3G is compliant with RoHS3 standards, making it suitable for environmentally conscious designs.
  • REACH Unaffected Status: This product is not affected by REACH regulations, ensuring uninterrupted supply and availability.

BC847BDW1T3G Applications

The BC847BDW1T3G is ideal for a variety of applications where high performance and reliability are crucial:

  1. Audio Amplifiers: The dual NPN configuration and low Vce saturation make it perfect for audio amplifier circuits, providing clear and distortion-free sound.
  2. Switching Regulators: The high frequency transition and low power dissipation make this device suitable for switching regulator applications, ensuring efficient power conversion.
  3. RF Amplifiers: The BC847BDW1T3G's high frequency capabilities make it an excellent choice for RF amplifiers in communication systems.
  4. Automotive Electronics: This device's robust performance and RoHS compliance make it ideal for various automotive electronic applications, such as engine control units and infotainment systems.

Conclusion of BC847BDW1T3G

The BC847BDW1T3G from onsemi is a versatile, high-performance dual NPN bipolar transistor array that offers exceptional technical specifications and performance benefits. Its unique features, such as high frequency transition, low Vce saturation, and dual NPN configuration, make it an ideal choice for a wide range of applications in the electronics industry. With its RoHS compliance and REACH unaffected status, the BC847BDW1T3G is a reliable and environmentally conscious solution for your next electronic design.

FAQ

Are there related or alternative parts for BC847BDW1T3G?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
What package or case is BC847BDW1T3G available in?
What is the standard lead time for BC847BDW1T3G?
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Is BC847BDW1T3G currently in stock?
Availability (In Stock : 14176 )
Quantity Unit Price Ext. Price
10+ $0.06037 $0.60
100+ $0.04876 $4.88
300+ $0.04296 $12.89
1000+ $0.03859 $38.59
5000+ $0.03281 $164.05
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