onsemi_BC847BPDXV6T1G

onsemi
BC847BPDXV6T1G  
Bipolar Transistor Arrays

onsemi
BC847BPDXV6T1G
277-BC847BPDXV6T1G
Ersa
onsemi-BC847BPDXV6T1G-datasheets-5322469.pdf
TRANS NPN/PNP 45V 0.1A SOT563
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    BC847BPDXV6T1G Description

    BC847BPDXV6T1G Description

    The BC847BPDXV6T1G is a high-performance Bipolar Transistor Array manufactured by onsemi. This NPN/PNP transistor is designed for a wide range of applications, offering superior performance and reliability. With a maximum collector-emitter breakdown voltage of 45V and a maximum collector current of 100mA, the BC847BPDXV6T1G is ideal for various electronic circuits. Its surface-mount design and tape & reel packaging make it suitable for automated assembly processes, enhancing production efficiency.

    BC847BPDXV6T1G Features

    • Frequency - Transition: 100MHz, ensuring fast switching capabilities for high-speed applications.
    • Current - Collector (Ic) (Max): 100mA, providing ample current for various electronic circuits.
    • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA, offering low saturation voltage for efficient power management.
    • Mounting Type: Surface Mount, facilitating automated assembly and reducing production costs.
    • Product Status: Active, ensuring ongoing availability and support.
    • Voltage - Collector Emitter Breakdown (Max): 45V, suitable for high-voltage applications.
    • Power - Max: 357mW, providing sufficient power for various electronic circuits.
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V, ensuring consistent performance across different operating conditions.

    BC847BPDXV6T1G Applications

    The BC847BPDXV6T1G is ideal for a wide range of applications, including:

    1. Audio Amplifiers: Its high-frequency capabilities and low saturation voltage make it suitable for audio amplification circuits.
    2. Switching Regulators: The BC847BPDXV6T1G's high breakdown voltage and low saturation voltage make it an excellent choice for switching regulator applications.
    3. RF Amplifiers: Its 100MHz transition frequency allows for use in RF amplification circuits, ensuring reliable performance in communication systems.
    4. Automotive Electronics: The BC847BPDXV6T1G's high voltage and current ratings, along with its surface-mount design, make it suitable for various automotive electronic systems.

    Conclusion of BC847BPDXV6T1G

    The BC847BPDXV6T1G is a versatile and high-performance Bipolar Transistor Array from onsemi. Its unique combination of high breakdown voltage, low saturation voltage, and high-frequency capabilities make it an ideal choice for a wide range of electronic applications. With its surface-mount design and tape & reel packaging, the BC847BPDXV6T1G offers efficient production and assembly, ensuring reliable performance in various electronic circuits.

    Tech Specifications

    Configuration
    PPAP
    Maximum Base Emitter Saturation Voltage (V)
    Product Status
    Voltage - Collector Emitter Breakdown (Max)
    Automotive
    Supplier Package
    Transistor Type
    Package / Case
    REACH Status
    Maximum Collector-Emitter Saturation Voltage (V)
    EU RoHS
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Collector Base Voltage (V)
    Frequency - Transition
    Current - Collector (Ic) (Max)
    ECCN
    Maximum Emitter Base Voltage (V)
    Mounting Type
    Standard Package Name
    Pin Count
    Mounting
    Lead Shape
    HTSUS
    Package
    Category
    PCB changed
    HTS
    Number of Elements per Chip
    Maximum Collector-Emitter Voltage (V)
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Package Height
    Mfr
    RoHS Status
    Maximum Transition Frequency (MHz)
    Vce Saturation (Max) @ Ib, Ic
    Package Length
    Series
    Type
    Minimum DC Current Gain
    Maximum DC Collector Current (A)
    Power - Max
    Part Status
    Current - Collector Cutoff (Max)
    Package Width
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Base Product Number
    Unit Weight
    Continuous Collector Current
    RoHS
    Maximum DC Collector Current
    Technology
    Collector-Emitter Saturation Voltage
    Collector- Base Voltage VCBO
    Height
    Maximum Operating Temperature
    DC Collector/Base Gain hfe Min
    Width
    Mounting Style
    Transistor Polarity
    Minimum Operating Temperature
    Emitter- Base Voltage VEBO
    Length
    Gain Bandwidth Product fT
    Collector- Emitter Voltage VCEO Max
    Pd - Power Dissipation
    USHTS

    BC847BPDXV6T1G Documents

    Download datasheets and manufacturer documentation for BC847BPDXV6T1G

    Ersa Mult Dev 24/Apr/2020      
    Ersa BC847BPDXV6T(1, 5)      
    Ersa Mult Devices 27/Oct/2017       Carrier Tape 15/Aug/2017      
    Ersa BC847BPDXV6T(1, 5)      
    Ersa Wire Bond 01/Dec/2010      
    Ersa onsemi RoHS       Material Declaration BC847BPDXV6T1G       onsemi REACH      

    Shopping Guide

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    Shipping Rate
    Shipments are made once a day around 5pm, excluding Sundays. Once shipped, the estimated delivery time is usually 5-7 business days, depending on the courier you choose.
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