onsemi

BC847BS

BC847BS Description

The BC847BS from onsemi is a dual NPN bipolar junction transistor (BJT) housed in a compact SC70-6 surface-mount package. Designed for general-purpose amplification and switching applications, this device offers a 45V collector-emitter breakdown voltage (V_CEO) and a 100mA continuous collector current (I_C). With a low V_CE(sat) of 650mV at 5mA base current and 100mA collector current, it ensures efficient switching performance. The BC847BS is REACH unaffected and classified under ECCN EAR99, making it suitable for global compliance-sensitive designs.

BC847BS Features

• Dual NPN Configuration: Integrates two matched NPN transistors in a single package, saving board space.
• High Current Gain (h_FE): Minimum 200 at 2mA I_C and 5V V_CE, ensuring reliable signal amplification.
• Low Leakage Current: Collector cutoff current (I_CBO) as low as 15nA, enhancing power efficiency.
• Compact & Reliable: SC70-6 package with MSL 1 (Unlimited) moisture sensitivity, ideal for automated assembly.
• Optimized Saturation Voltage: 650mV max at 100mA I_C, reducing power loss in switching applications.

BC847BS Applications

• Signal Amplification: Ideal for low-noise preamplifiers and audio stages due to high h_FE.
• Switching Circuits: Efficiently drives relays, LEDs, and small motors with low V_CE(sat).
• Portable Electronics: Compact size suits space-constrained designs like wearables and IoT devices.
• Differential Pairs: Matched dual transistors enable precise analog circuits (e.g., sensors, comparators).

Conclusion of BC847BS

The BC847BS stands out for its dual NPN integration, low saturation voltage, and high gain, making it a versatile choice for both analog and digital designs. While marked obsolete, its performance in battery-powered systems, signal conditioning, and load switching remains competitive. Engineers should verify replacement options but can leverage its SC70-6 footprint for legacy or low-power applications demanding reliability.