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BC847CDW1T1G

277-BC847CDW1T1G
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Dual NPN BJT, 45V, 100mA, 100MHz, SOT-363-6
23 Weeks

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Tech Specifications

Package/Case
SOT-363-6
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
45V
Collector Emitter Saturation Voltage
600mV
Collector Emitter Voltage (VCEO)
45V
Collector-emitter Voltage-Max
600mV
Current Rating
100mA
Emitter Base Voltage (VEBO)
6V
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BC847CDW1T1G Description

BC847CDW1T1G Description

BC847CDW1T1G is a high-performance, dual NPN bipolar transistor array developed by ON Semiconductor. This device is designed for a wide range of applications, including general-purpose amplification, switching, and signal processing. With a maximum collector-emitter breakdown voltage of 45V and a maximum collector current of 100mA, BC847CDW1T1G offers excellent performance in various electronic circuits.

BC847CDW1T1G Features

  • Technical Specifications:

    • Frequency - Transition: 100MHz
    • Current - Collector (Ic) (Max): 100mA
    • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
    • Voltage - Collector Emitter Breakdown (Max): 45V
    • Power - Max: 380mW
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Performance Benefits:

    • Surface-mount packaging for compact design and ease of integration
    • High-frequency capability up to 100MHz for fast switching and signal processing
    • Low saturation voltage for improved efficiency in switching applications
    • Wide operating voltage range for compatibility with various power supplies
  • Unique Features and Advantages:

    • Dual NPN configuration for increased flexibility in circuit design
    • RoHS3 compliant for environmental sustainability
    • REACH unaffected for regulatory compliance
    • Active product status for ongoing availability and support

BC847CDW1T1G Applications

BC847CDW1T1G is ideal for various applications where high performance, reliability, and compact design are required. Some specific use cases include:

  1. Amplification: General-purpose audio and signal amplification in consumer electronics, such as audio amplifiers, headphones, and speakers.
  2. Switching: Efficient switching in power management circuits, such as battery chargers, power supplies, and motor control systems.
  3. Signal Processing: Fast signal processing in communication systems, such as radio frequency (RF) modules, and wireless communication devices.
  4. Automotive: Use in automotive electronics, such as engine control units (ECUs), sensor interfaces, and infotainment systems.

Conclusion of BC847CDW1T1G

In conclusion, BC847CDW1T1G is a versatile, high-performance dual NPN bipolar transistor array that offers excellent technical specifications, performance benefits, and unique features. Its compact surface-mount packaging, high-frequency capability, and wide operating voltage range make it an ideal choice for a wide range of applications in the electronics industry. With ongoing support from ON Semiconductor, BC847CDW1T1G is a reliable and sustainable solution for your electronic design needs.

FAQ

What operating temperature range does BC847CDW1T1G support?
BC847CDW1T1G has an operating temperature range of 150°C.
What is BC847CDW1T1G?
Does BC847CDW1T1G have quantity-based pricing?
What package or case is BC847CDW1T1G available in?
What is the standard lead time for BC847CDW1T1G?
Availability (In Stock : 13624 )
Quantity Unit Price Ext. Price
10+ $0.06809 $0.68
100+ $0.05533 $5.53
300+ $0.04896 $14.69
3000+ $0.04312 $129.36
6000+ $0.03929 $235.74
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