onsemi

BC847CWT1G

BC847CWT1G Description

The BC847CWT1G is a high-performance NPN transistor from onsemi, designed for a wide range of applications in the electronics industry. With a maximum collector-emitter breakdown voltage of 45V and a maximum collector current of 100mA, this device offers excellent performance in various power and signal amplification applications. The BC847CWT1G features a surface-mount package, making it ideal for use in compact and space-constrained designs.

BC847CWT1G Features

• NPN transistor type for efficient signal amplification
• Maximum collector-emitter breakdown voltage of 45V for reliable operation in high-voltage circuits
• Maximum collector current of 100mA for effective power handling
• Surface-mount package for compact and space-saving designs
• Frequency transition of 100MHz for high-speed signal processing
• Maximum Vce saturation of 600mV at 5mA and 100mA for low power consumption
• DC current gain (hFE) of 420 at 2mA and 5V for consistent performance
• Moisture sensitivity level 1 for unlimited storage and handling
• RoHS3 compliant for environmental sustainability
• REACH unaffected for regulatory compliance

BC847CWT1G Applications

The BC847CWT1G is ideal for a variety of applications, including:

1. Audio and video amplifiers
2. Switching regulators
3. RF and IF amplifiers
4. Motor control circuits
5. Consumer electronics
6. Industrial control systems
7. Telecommunication equipment

Conclusion of BC847CWT1G

The BC847CWT1G from onsemi is a versatile and reliable NPN transistor, offering excellent performance in a wide range of applications. Its high breakdown voltage, low saturation voltage, and surface-mount package make it an ideal choice for high-voltage, high-speed, and compact designs. With its RoHS3 compliance and REACH unaffected status, the BC847CWT1G is also an environmentally friendly option for your electronic projects.