The BC847CWT1G is a high-performance NPN transistor from onsemi, designed for a wide range of applications in the electronics industry. With a maximum collector-emitter breakdown voltage of 45V and a maximum collector current of 100mA, this device offers excellent performance in various power and signal amplification applications. The BC847CWT1G features a surface-mount package, making it ideal for use in compact and space-constrained designs.
The BC847CWT1G is ideal for a variety of applications, including:
The BC847CWT1G from onsemi is a versatile and reliable NPN transistor, offering excellent performance in a wide range of applications. Its high breakdown voltage, low saturation voltage, and surface-mount package make it an ideal choice for high-voltage, high-speed, and compact designs. With its RoHS3 compliance and REACH unaffected status, the BC847CWT1G is also an environmentally friendly option for your electronic projects.
Download datasheets and manufacturer documentation for BC847CWT1G