onsemi
BC848BLT1G  
Single Bipolar Transistors

onsemi
BC848BLT1G
276-BC848BLT1G
Ersa
onsemi-BC848BLT1G-datasheets-5363859.pdf
TRANS NPN 30V 0.1A SOT23-3
In Stock : 33179

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    BC848BLT1G Description

    BC848BLT1G Description

    The BC848BLT1G is a high-performance NPN bipolar junction transistor designed and manufactured by onsemi. This surface-mount device is part of the Single Bipolar Transistors category and is known for its robust performance in various electronic applications. With a maximum collector-emitter breakdown voltage of 30V and a maximum collector current of 100mA, the BC848BLT1G is an ideal choice for applications requiring high power and voltage handling capabilities.

    BC848BLT1G Features

    • Technical Specifications:

      • Frequency - Transition: 100MHz
      • Current - Collector (Ic) (Max): 100 mA
      • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
      • Voltage - Collector Emitter Breakdown (Max): 30 V
      • Transistor Type: NPN
      • Power - Max: 300 mW
      • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
      • Current - Collector Cutoff (Max): 15nA (ICBO)
    • Performance Benefits:

      • High-frequency operation up to 100MHz
      • Low saturation voltage for improved efficiency
      • High current gain for better signal amplification
      • Moisture Sensitivity Level (MSL) 1, suitable for various environmental conditions
    • Unique Advantages:

      • Active product status, ensuring ongoing availability and support
      • REACH Unaffected and ROHS3 Compliant, adhering to environmental regulations
      • Surface Mount technology for compact and efficient PCB design

    BC848BLT1G Applications

    The BC848BLT1G is ideal for a wide range of applications due to its high power and voltage handling capabilities, as well as its high-frequency operation. Some specific use cases include:

    1. Audio Amplifiers: Utilize the BC848BLT1G's high current gain and power handling for efficient audio signal amplification.
    2. Switching Applications: Benefit from the device's low saturation voltage and high switching speed for efficient power switching in various electronic devices.
    3. RF Amplifiers: Leverage the high-frequency capabilities of the BC848BLT1G for amplification in radio frequency applications.
    4. Motor Control: Use the BC848BLT1G's high voltage and current ratings for controlling motor speed and direction in various industrial and automotive applications.

    Conclusion of BC848BLT1G

    The BC848BLT1G is a versatile and high-performance NPN bipolar junction transistor that offers a combination of high power, voltage, and frequency capabilities. Its unique features, such as low saturation voltage, high current gain, and compliance with environmental regulations, make it an ideal choice for a wide range of applications, including audio amplifiers, switching applications, RF amplifiers, and motor control. With ongoing support and availability from onsemi, the BC848BLT1G is a reliable and efficient solution for your electronic design needs.

    Tech Specifications

    Configuration
    PPAP
    Maximum Base Emitter Saturation Voltage (V)
    Product Status
    Voltage - Collector Emitter Breakdown (Max)
    Automotive
    Supplier Package
    Transistor Type
    Package / Case
    REACH Status
    Maximum Collector-Emitter Saturation Voltage (V)
    EU RoHS
    Moisture Sensitivity Level (MSL)
    Operating Temperature
    Maximum Collector Base Voltage (V)
    Frequency - Transition
    Current - Collector (Ic) (Max)
    ECCN
    Maximum Emitter Base Voltage (V)
    Mounting Type
    Standard Package Name
    Pin Count
    Mounting
    Lead Shape
    HTSUS
    Package
    Category
    PCB changed
    HTS
    Number of Elements per Chip
    Maximum Collector-Emitter Voltage (V)
    ECCN (US)
    Maximum Power Dissipation (mW)
    Supplier Device Package
    Minimum Operating Temperature (°C)
    Maximum Operating Temperature (°C)
    Package Height
    Mfr
    RoHS Status
    Vce Saturation (Max) @ Ib, Ic
    Material
    Package Length
    Series
    Type
    Minimum DC Current Gain
    Operating Junction Temperature (°C)
    Maximum DC Collector Current (A)
    Power - Max
    Part Status
    Current - Collector Cutoff (Max)
    Package Width
    Maximum Collector Cut-Off Current (nA)
    DC Current Gain (hFE) (Min) @ Ic, Vce
    Base Product Number
    Unit Weight
    Continuous Collector Current
    RoHS
    Maximum DC Collector Current
    Technology
    Collector-Emitter Saturation Voltage
    Collector- Base Voltage VCBO
    Height
    Maximum Operating Temperature
    DC Collector/Base Gain hfe Min
    Width
    Mounting Style
    Transistor Polarity
    Minimum Operating Temperature
    Emitter- Base Voltage VEBO
    Length
    Gain Bandwidth Product fT
    Collector- Emitter Voltage VCEO Max
    Pd - Power Dissipation
    USHTS

    BC848BLT1G Documents

    Download datasheets and manufacturer documentation for BC848BLT1G

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    Ersa SOT23 16/Sep/2016       Gold to Copper Wire 08/May/2007      
    Ersa onsemi RoHS       onsemi REACH       Material Declaration BC848BLT1G      

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