onsemi_BC848BLT1G
original

onsemi
BC848BLT1G

276-BC848BLT1G
PDF Datasheet
NPN BJT, 30V, 100mA, 100MHz, SOT-23-3
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Tech Specifications

Package/Case
SOT-23-3
Collector Base Voltage (VCBO)
30V
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
600mV
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
600mV
Contact Plating
Tin, Matte
Current Rating
100mA
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BC848BLT1G Description

BC848BLT1G Description

The BC848BLT1G is a high-performance NPN bipolar junction transistor designed and manufactured by onsemi. This surface-mount device is part of the Single Bipolar Transistors category and is known for its robust performance in various electronic applications. With a maximum collector-emitter breakdown voltage of 30V and a maximum collector current of 100mA, the BC848BLT1G is an ideal choice for applications requiring high power and voltage handling capabilities.

BC848BLT1G Features

  • Technical Specifications:

    • Frequency - Transition: 100MHz
    • Current - Collector (Ic) (Max): 100 mA
    • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
    • Voltage - Collector Emitter Breakdown (Max): 30 V
    • Transistor Type: NPN
    • Power - Max: 300 mW
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
    • Current - Collector Cutoff (Max): 15nA (ICBO)
  • Performance Benefits:

    • High-frequency operation up to 100MHz
    • Low saturation voltage for improved efficiency
    • High current gain for better signal amplification
    • Moisture Sensitivity Level (MSL) 1, suitable for various environmental conditions
  • Unique Advantages:

    • Active product status, ensuring ongoing availability and support
    • REACH Unaffected and ROHS3 Compliant, adhering to environmental regulations
    • Surface Mount technology for compact and efficient PCB design

BC848BLT1G Applications

The BC848BLT1G is ideal for a wide range of applications due to its high power and voltage handling capabilities, as well as its high-frequency operation. Some specific use cases include:

  1. Audio Amplifiers: Utilize the BC848BLT1G's high current gain and power handling for efficient audio signal amplification.
  2. Switching Applications: Benefit from the device's low saturation voltage and high switching speed for efficient power switching in various electronic devices.
  3. RF Amplifiers: Leverage the high-frequency capabilities of the BC848BLT1G for amplification in radio frequency applications.
  4. Motor Control: Use the BC848BLT1G's high voltage and current ratings for controlling motor speed and direction in various industrial and automotive applications.

Conclusion of BC848BLT1G

The BC848BLT1G is a versatile and high-performance NPN bipolar junction transistor that offers a combination of high power, voltage, and frequency capabilities. Its unique features, such as low saturation voltage, high current gain, and compliance with environmental regulations, make it an ideal choice for a wide range of applications, including audio amplifiers, switching applications, RF amplifiers, and motor control. With ongoing support and availability from onsemi, the BC848BLT1G is a reliable and efficient solution for your electronic design needs.

FAQ

Are there related or alternative parts for BC848BLT1G?
Yes. Related or alternative parts may be available on this page when relevant product data is provided.
Does BC848BLT1G have quantity-based pricing?
What voltage specification is listed for BC848BLT1G?
What package or case is BC848BLT1G available in?
What is BC848BLT1G?
Availability (In Stock : 13720 )
Quantity Unit Price Ext. Price
20+ $0.04073 $0.81
200+ $0.03204 $6.41
600+ $0.02720 $16.32
3000+ $0.02431 $72.93
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