The BC848BLT1G is a high-performance NPN bipolar junction transistor designed and manufactured by onsemi. This surface-mount device is part of the Single Bipolar Transistors category and is known for its robust performance in various electronic applications. With a maximum collector-emitter breakdown voltage of 30V and a maximum collector current of 100mA, the BC848BLT1G is an ideal choice for applications requiring high power and voltage handling capabilities.
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The BC848BLT1G is ideal for a wide range of applications due to its high power and voltage handling capabilities, as well as its high-frequency operation. Some specific use cases include:
The BC848BLT1G is a versatile and high-performance NPN bipolar junction transistor that offers a combination of high power, voltage, and frequency capabilities. Its unique features, such as low saturation voltage, high current gain, and compliance with environmental regulations, make it an ideal choice for a wide range of applications, including audio amplifiers, switching applications, RF amplifiers, and motor control. With ongoing support and availability from onsemi, the BC848BLT1G is a reliable and efficient solution for your electronic design needs.
Download datasheets and manufacturer documentation for BC848BLT1G