onsemi_BC848BWT1

onsemi
BC848BWT1  
Single Bipolar Transistors

onsemi
BC848BWT1
276-BC848BWT1
Ersa
onsemi-BC848BWT1-datasheets-7121231.pdf
TRANS NPN 30V 0.1A SC70-3
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BC848BWT1 Description

BC848BWT1 Description

The BC848BWT1 is a high-performance NPN bipolar transistor designed and manufactured by onsemi. This surface-mount device is part of the BC848 family, known for its excellent electrical characteristics and reliability. With a maximum collector-emitter breakdown voltage of 30V and a maximum collector current of 100mA, the BC848BWT1 is suitable for a wide range of applications. The device is packaged in a small SC70-3 package, making it ideal for space-constrained designs.

BC848BWT1 Features

  • Frequency - Transition: 100MHz, enabling high-speed switching applications.
  • Current - Collector (Ic) (Max): 100mA, providing ample current drive capability.
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA, ensuring low power dissipation.
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V, offering consistent performance.
  • Power - Max: 150mW, suitable for low-power applications.
  • Moisture Sensitivity Level (MSL): 1 (Unlimited), providing excellent storage stability.
  • REACH Status: REACH Unaffected, ensuring compliance with environmental regulations.

BC848BWT1 Applications

The BC848BWT1 is an ideal choice for various applications due to its high performance and small form factor. Some specific use cases include:

  1. General-purpose amplification: The device's high-frequency capability and low saturation voltage make it suitable for audio and signal amplification applications.
  2. Switching circuits: The BC848BWT1's ability to handle up to 100mA of collector current and 30V of collector-emitter voltage make it ideal for low-power switching applications.
  3. Automotive electronics: The device's robustness and wide operating voltage range make it suitable for use in automotive electronics, such as power windows and door locks.
  4. Telecommunications: The high-frequency performance of the BC848BWT1 makes it suitable for use in telecommunications equipment, such as signal conditioning and amplification circuits.

Conclusion of BC848BWT1

The BC848BWT1 is a versatile NPN bipolar transistor that offers excellent performance in a compact package. Its high-frequency capability, low saturation voltage, and wide operating voltage range make it suitable for a wide range of applications, including general-purpose amplification, switching circuits, automotive electronics, and telecommunications. While the device is now considered obsolete, it remains a popular choice for designers looking for a reliable and high-performance transistor in a small form factor.

Tech Specifications

Operating Temperature
Frequency - Transition
Current - Collector (Ic) (Max)
Vce Saturation (Max) @ Ib, Ic
ECCN
Mounting Type
Product Status
Voltage - Collector Emitter Breakdown (Max)
Supplier Device Package
Series
Transistor Type
Package / Case
Power - Max
REACH Status
Mfr
Current - Collector Cutoff (Max)
HTSUS
Package
RoHS Status
DC Current Gain (hFE) (Min) @ Ic, Vce
Base Product Number
Moisture Sensitivity Level (MSL)
Category
Configuration
PCB changed
HTS
Number of Elements per Chip
Maximum Collector-Emitter Voltage (V)
ECCN (US)
PPAP
Maximum Power Dissipation (mW)
Maximum Base Emitter Saturation Voltage (V)
Automotive
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Supplier Package
Package Height
Maximum Collector-Emitter Saturation Voltage (V)
EU RoHS
Maximum Collector Base Voltage (V)
Maximum Transition Frequency (MHz)
SVHC Exceeds Threshold
Maximum Emitter Base Voltage (V)
Material
Package Length
Standard Package Name
Pin Count
Mounting
Type
Minimum DC Current Gain
Maximum DC Collector Current (A)
Lead Shape
Part Status
SVHC
Package Width
Maximum Collector Cut-Off Current (nA)

BC848BWT1 Documents

Download datasheets and manufacturer documentation for BC848BWT1

Ersa BC846,47,48      
Ersa Multiple Devices 30/Jun/2006      
Ersa BC846,47,48      
Ersa onsemi RoHS      

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