onsemi_BC848BWT1G
original

onsemi
BC848BWT1G

276-BC848BWT1G
PDF Datasheet
NPN BJT Transistor, 30V, 100mA, 100MHz, SC-70
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Tech Specifications

Package/Case
SC
Collector Base Voltage (VCBO)
30V
Collector Emitter Breakdown Voltage
30V
Collector Emitter Saturation Voltage
600mV
Collector Emitter Voltage (VCEO)
30V
Collector-emitter Voltage-Max
600mV
Contact Plating
Tin, Matte
Current Rating
100mA
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BC848BWT1G Description

BC848BWT1G Description

The BC848BWT1G is a high-performance NPN bipolar transistor designed and manufactured by onsemi. This single Bipolar Transistor is housed in a compact SC70-3 package, making it ideal for surface mount applications. With a maximum collector-emitter breakdown voltage of 30V and a maximum collector current of 100mA, the BC848BWT1G delivers excellent performance in a wide range of electronic circuits.

BC848BWT1G Features

  • Technical Specifications:

    • Frequency - Transition: 100MHz
    • Current - Collector (Ic) (Max): 100 mA
    • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
    • Voltage - Collector Emitter Breakdown (Max): 30 V
    • Power - Max: 150 mW
    • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
    • Current - Collector Cutoff (Max): 15nA (ICBO)
    • Moisture Sensitivity Level (MSL): 1 (Unlimited)
  • Performance Benefits:

    • High frequency transition up to 100MHz for fast switching applications
    • Low Vce saturation voltage for improved efficiency in low-voltage circuits
    • High current gain (hFE) for better signal amplification
    • Low collector cutoff current for reduced power consumption in idle mode
  • Unique Features and Advantages:

    • Surface mount packaging for compact and efficient PCB layout
    • Active product status with ongoing support from onsemi
    • REACH unaffected and RoHS3 compliant for environmental sustainability
    • EAR99 and HTSUS classification for hassle-free global trade

BC848BWT1G Applications

The BC848BWT1G is an ideal choice for various electronic applications, including:

  1. Amplifier Circuits: Its high current gain and low saturation voltage make it suitable for audio and signal amplification in consumer electronics.
  2. Switching Applications: The high transition frequency and low collector cutoff current enable efficient switching in power management systems.
  3. RF and Wireless Communications: The 100MHz frequency transition capability allows for use in RF circuits and wireless communication devices.
  4. Automotive Electronics: The robust performance and automotive-grade packaging make it suitable for use in automotive control systems and sensors.

Conclusion of BC848BWT1G

The BC848BWT1G is a versatile and high-performance NPN bipolar transistor that offers excellent technical specifications, performance benefits, and unique features. Its compact surface mount packaging, high frequency transition, and low power consumption make it an ideal choice for a wide range of electronic applications, including amplifiers, switching circuits, RF communications, and automotive electronics. With ongoing support from onsemi and compliance with environmental regulations, the BC848BWT1G is a reliable and sustainable solution for your electronic design needs.

FAQ

What voltage specification is listed for BC848BWT1G?
The listed voltage-related specification for BC848BWT1G is 30V.
Does BC848BWT1G have quantity-based pricing?
What is BC848BWT1G?
What package or case is BC848BWT1G available in?
Is BC848BWT1G currently in stock?
Availability (In Stock : 15 )
Quantity Unit Price Ext. Price
5+ $0.06707 $0.34
50+ $0.06575 $3.29
150+ $0.06487 $9.73
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