onsemi_BC848CWT1G

onsemi
BC848CWT1G  
Single Bipolar Transistors

onsemi
BC848CWT1G
276-BC848CWT1G
Ersa
onsemi-BC848CWT1G-datasheets-9773656.pdf
TRANS NPN 30V 0.1A SC70-3
In Stock : 76530

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BC848CWT1G Description

BC848CWT1G Description

The BC848CWT1G is a high-performance NPN transistor manufactured by onsemi, designed for a wide range of applications in the electronics industry. With a frequency transition of 100MHz, it offers excellent high-frequency performance, making it suitable for various applications that require fast switching and high-speed signal processing. The device is designed for surface mount applications, ensuring a compact footprint and ease of integration into modern electronic systems.

BC848CWT1G Features

  • High Frequency Performance: With a frequency transition of 100MHz, the BC848CWT1G provides superior high-frequency performance compared to similar models, making it ideal for applications that require fast switching and high-speed signal processing.
  • Low Saturation Voltage: The device features a low Vce saturation voltage of 600mV at 5mA and 100mA, ensuring efficient operation and low power consumption.
  • High DC Current Gain: The BC848CWT1G boasts a minimum DC current gain (hFE) of 420 at 2mA and 5V, providing excellent amplification capabilities.
  • Robust Power Handling: The transistor can handle a maximum power of 150mW, making it suitable for applications that require high power handling.
  • Low Collector Cutoff Current: The device features a low collector cutoff current of 15nA (ICBO), ensuring minimal leakage current and improved performance in low-power applications.
  • RoHS Compliance: The BC848CWT1G is compliant with RoHS3 standards, making it an environmentally friendly choice for electronic designs.

BC848CWT1G Applications

The BC848CWT1G is ideal for a variety of applications in the electronics industry, including:

  1. Audio Amplifiers: The high-frequency performance and low saturation voltage make it suitable for audio amplifiers, ensuring clear and distortion-free audio output.
  2. Switching Regulators: The device's high DC current gain and low saturation voltage make it an excellent choice for switching regulators, providing efficient power conversion and regulation.
  3. RF Applications: The high-frequency performance of the BC848CWT1G makes it suitable for RF applications, such as radio frequency identification (RFID) systems and wireless communication devices.
  4. Automotive Electronics: The robust power handling and low leakage current of the BC848CWT1G make it ideal for automotive electronics, such as engine control units and sensor systems.

Conclusion of BC848CWT1G

The BC848CWT1G is a versatile and high-performance NPN transistor that offers excellent high-frequency performance, low saturation voltage, and high DC current gain. Its compact surface mount design, RoHS compliance, and low collector cutoff current make it an ideal choice for a wide range of applications in the electronics industry, including audio amplifiers, switching regulators, RF applications, and automotive electronics. With its unique features and advantages over similar models, the BC848CWT1G is a reliable and efficient solution for your electronic design needs.

Tech Specifications

Configuration
PPAP
Maximum Base Emitter Saturation Voltage (V)
Product Status
Voltage - Collector Emitter Breakdown (Max)
Automotive
Supplier Package
Transistor Type
Package / Case
REACH Status
Maximum Collector-Emitter Saturation Voltage (V)
EU RoHS
Moisture Sensitivity Level (MSL)
Operating Temperature
Maximum Collector Base Voltage (V)
Frequency - Transition
Current - Collector (Ic) (Max)
ECCN
Maximum Emitter Base Voltage (V)
Mounting Type
Standard Package Name
Pin Count
Mounting
Lead Shape
HTSUS
Package
Category
PCB changed
HTS
Number of Elements per Chip
Maximum Collector-Emitter Voltage (V)
ECCN (US)
Maximum Power Dissipation (mW)
Supplier Device Package
Minimum Operating Temperature (°C)
Maximum Operating Temperature (°C)
Package Height
Mfr
RoHS Status
Maximum Transition Frequency (MHz)
Vce Saturation (Max) @ Ib, Ic
Material
Package Length
Series
Type
Minimum DC Current Gain
Operating Junction Temperature (°C)
Maximum DC Collector Current (A)
Power - Max
Part Status
Current - Collector Cutoff (Max)
Package Width
Maximum Collector Cut-Off Current (nA)
DC Current Gain (hFE) (Min) @ Ic, Vce
Base Product Number
Unit Weight
Continuous Collector Current
RoHS
Maximum DC Collector Current
Technology
Collector-Emitter Saturation Voltage
Collector- Base Voltage VCBO
Height
Maximum Operating Temperature
DC Collector/Base Gain hfe Min
Width
Mounting Style
Transistor Polarity
Minimum Operating Temperature
Emitter- Base Voltage VEBO
Length
Gain Bandwidth Product fT
Collector- Emitter Voltage VCEO Max
Pd - Power Dissipation
USHTS

BC848CWT1G Documents

Download datasheets and manufacturer documentation for BC848CWT1G

Ersa Mult Dev 05/Dec/2019      
Ersa BC846-48      
Ersa BC846-48      
Ersa Copper Wire 19/May/2010      
Ersa onsemi RoHS       Material Declaration BC848CWT1G      

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