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BC856BDW1T1G
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Tech Specifications
BC856BDW1T1G Description
The BC856BDW1T1G is a high-speed switching diode from ON Semiconductor. It is designed for use in a variety of electronic circuits, including high-speed switching, pulse and signal integrity, and low-voltage high-current applications.
Description:
The BC856BDW1T1G is a silicon planar NPN epitaxial transistor. It is designed for high-speed switching and low-noise applications. The device features a low collector-emitter saturation voltage, high current gain, and high switching speeds.
Features:
- Silicon planar NPN transistor
- Low collector-emitter saturation voltage (Vce(sat))
- High current gain (hFE)
- High switching speeds
- Low noise characteristics
- Suitable for high-speed switching and low-noise applications
Applications:
- High-speed switching circuits
- Pulse and signal integrity circuits
- Low-voltage high-current applications
- Amplifier circuits
- Digital circuits
- RF power amplifiers
In summary, the BC856BDW1T1G is a high-speed switching diode that is designed for use in a variety of electronic circuits. Its features include a low collector-emitter saturation voltage, high current gain, and high switching speeds, making it suitable for high-speed switching, pulse and signal integrity, and low-voltage high-current applications.
FAQ
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.08810 | $0.09 |
| 10+ | $0.07200 | $0.72 |
| 30+ | $0.06400 | $1.92 |
| 100+ | $0.05800 | $5.80 |
| 600+ | $0.05210 | $31.26 |
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