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BC857BDW1T1G
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Tech Specifications
BC857BDW1T1G Description
The BC857BDW1T1G is a high-frequency NPN epitaxial planar transistor from ON Semiconductor. It is designed for a wide range of applications, including general-purpose amplification and switching.
Description:
The BC857BDW1T1G is an NPN silicon transistor with a maximum collector-emitter voltage (Vce) of 45V, a maximum collector current (Ic) of 100mA, and a maximum power dissipation (Pd) of 625mW. It has a low noise figure and high current gain, making it suitable for use in a variety of applications.
Features:
- High-frequency NPN epitaxial planar transistor
- Maximum collector-emitter voltage (Vce) of 45V
- Maximum collector current (Ic) of 100mA
- Maximum power dissipation (Pd) of 625mW
- Low noise figure
- High current gain
Applications:
The BC857BDW1T1G transistor can be used in a variety of applications, including:
- General-purpose amplification
- Switching applications
- FM and AM radio receivers
- TV and video equipment
- Cordless phones
- VCRs
- Automotive electronics
- Audio equipment
- Computer peripherals
In summary, the BC857BDW1T1G is a versatile NPN transistor that offers high-frequency performance and low noise characteristics, making it suitable for a wide range of applications in the consumer electronics, industrial, and automotive markets.
FAQ
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100+ | $0.03841 | $3.84 |
| 300+ | $0.03376 | $10.13 |
| 3000+ | $0.03028 | $90.84 |
| 6000+ | $0.02748 | $164.88 |
| 9000+ | $0.02608 | $234.72 |
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